- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371367 > 20MT120UF (International Rectifier) UltraFast NPT IGBT PDF資料下載
參數(shù)資料
| 型號(hào)： | 20MT120UF |
| 廠商： | International Rectifier |
| 英文描述： | UltraFast NPT IGBT |
| 中文描述： | 超快速IGBT的不擴(kuò)散核武器條約 |
| 文件頁(yè)數(shù)： | 2/13頁(yè) |
| 文件大小： | 699K |
| 代理商： | 20MT120UF |
第1頁(yè)當(dāng)前第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)
2
20MT120UF
I27124 rev. D 02/03
www.irf.com
V
(BR)CES
V
(BR)CES
/ Temperature Coeff. of
T
J
Breakdown Voltage
V
CE(ON)
Collector-to-Emitter Saturation Voltage
Collector-to-Emitter Breakdown Voltage 1200
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 3mA (25-125°C)
+1.3
V/°C
3.29
4.42
3.87
5.32
3.99
3.59
4.66
4.11
5.70
4.27
6
V
V
GE
= 15V, I
C
= 20A
V
GE
= 15V, I
C
= 40A
V
GE
= 15V, I
C
= 20A T
J
= 125°C
V
GE
= 15V, I
C
= 40A T
J
= 125°C
V
GE
= 15V, I
C
= 20A T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
V
CE
= V
GE
, I
C
= 3mA (25-125°C)
V
GE(th)
V
GE(th)
/ Temperature Coeff. of
T
J
Threshold Voltage
g
fe
Transconductance
I
CES
Zero Gate Voltage Collector Current
(1)
Gate Threshold Voltage
4
V
-14
mV/°C
17.5
S
μA
mA
V
CE
= 50V, I
C
= 20A, PW = 80μs
V
GE
= 0V, V
CE
= 1200V, T
J
= 25°C
V
GE
= 0V, V
CE
= 1200V, T
J
= 125°C
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
V
GE
= ± 20V
250
3.0
9.0
±250
0.7
2.9
I
GES
Gate-to-Emitter Leakage Current
nA
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
Min
Typ Max Units Test Conditions
Q
g
Q
ge
Q
gc
E
on
E
off
E
tot
Total Gate Charge (turn-on)
Gate-Emitter Charge (turn-on)
Gate-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
176
19
89
513
402
915
264
30
134
770
603
1373
nC
I
C
= 20A
V
CC
= 600V
V
GE
= 15V
V
CC
= 600V, I
C
= 20A
V
GE
= 15V, R
g
= 5
, L = 200μH
T
J
= 25°C, Energy losses include tail
and diode reverse recovery
V
CC
= 600V, I
C
= 20A
V
GE
= 15V, R
g
= 5
, L = 200μH
T
J
= 125°C, Energy losses include tail
and diode reverse recovery
V
GE
= 0V
V
CC
= 30V
f = 1.0 MHz
T
J
= 150°C, I
C
= 120A
V
CC
= 1000V, V
p
= 1200V
R
g
= 5
, V
GE
= +15V to 0V
T
J
= 150°C
V
CC
= 900V, V
p
= 1200V
R
g
= 5
, V
GE
= +15V to 0V
μJ
E
on
E
off
E
tot
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
930
610
1540
1395
915
2310
μJ
C
ies
C
oes
C
res
RBSOA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
2530
344
78
3790
516
117
pF
full square
SCSOA
Short Circuit Safe Operating Area
10
μs
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
Min
Typ Max Units Test Conditions
(1)
I
CES
includes also opposite leg overall leakage
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 20N03HL | HDTMOS E-FET High Density Power FET DPAK for Surface Mount |
| 20N60A4 | 600V, SMPS Series N-Channel IGBTsnull |
| 20NAB06 | 3-phase bridge rectifier +braking chopper +3-phase bridge inverter |
| 20NAB12 | 3-phase bridge rectifier +braking chopper +3-phase bridge inverter |
| 20PMT03 | 10/100 Base TX Transformer Designed for general Chipsets |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 20MT120UFAPBF | 制造商:Vishay Intertechnologies 功能描述:Trans IGBT Module N-CH 1.2KV 20A 16-Pin MTP |
| 20MT120UFP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:'Full Bridge' IGBT MTP (Ultrafast NPT IGBT), 40 A |
| 20MT120UFPBF | 制造商:Vishay Semiconductors 功能描述:IGBT MODULE FULL BRIDGE |
| 20MU20NU | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:AUSSENGEWINDE BSP DREHB G 1.25X1.25ZOLL |
| 20MV1 | 功能描述:電源線濾波器 .250 20A FILTER FLANGE MOUNT RoHS:否 制造商:EPCOS 電壓額定值:277 VAC 電流額定值:100 A 安裝風(fēng)格:Chassis 端接類型:Screw |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。