參數(shù)資料
型號(hào): 20MT120UFP
廠商: VISHAY INTERTECHNOLOGY INC
元件分類(lèi): IGBT 晶體管
英文描述: 40 A, 1200 V, N-CHANNEL IGBT
封裝: ROHS COMPLIANT, MTP, 16 PIN
文件頁(yè)數(shù): 7/11頁(yè)
文件大小: 311K
代理商: 20MT120UFP
Document Number: 94505
For technical questions, contact: indmodules@vishay.com
www.vishay.com
Revision: 01-Mar-10
5
20MT120UFP
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 40 A
Vishay High Power Products
Fig. 7 - Typical IGBT Output Characteristics
TJ = 125 °C; tp = 80 μs
Fig. 8 - Typical Diode Forward Characteristics
tp = 80 μs
Fig. 9 - Typical VCE vs. VGE
TJ = - 40 °C
Fig. 10 - Typical VCE vs. VGE
TJ = 25 °C
Fig. 11 - Typical VCE vs. VGE
TJ = 125 °C
Fig. 12 - Typical Transfer Characteristics
VCE = 50 V; tp = 10 μs
02468
10
VCE (V)
0
20
40
60
80
100
I
E
C
)
A(
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0.0
1.0
2.0
3.0
4.0
5.0
V(V)
0
20
40
60
80
100
120
I F
F
)
A(
-40°C
25°C
125°C
510
15
20
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
V
E
C
)
V(
ICE = 40A
ICE = 20A
ICE = 10A
5
10
15
20
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
V
E
C
)
V(
ICE = 10A
ICE = 20A
ICE = 40A
5
10
15
20
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
V
E
C
(V
)
ICE = 10A
ICE = 20A
ICE = 40A
0
5
10
15
20
VGE (V)
0
50
100
150
200
250
300
I
E
C
)
A(
TJ = 25°C
TJ = 150°C
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