參數(shù)資料
型號: 20MT120UFP
廠商: VISHAY INTERTECHNOLOGY INC
元件分類: IGBT 晶體管
英文描述: 40 A, 1200 V, N-CHANNEL IGBT
封裝: ROHS COMPLIANT, MTP, 16 PIN
文件頁數(shù): 8/11頁
文件大小: 311K
代理商: 20MT120UFP
www.vishay.com
For technical questions, contact: indmodules@vishay.com
Document Number: 94505
6
Revision: 01-Mar-10
20MT120UFP
Vishay High Power Products "Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 40 A
Fig. 13 - Typical Energy Loss vs. IC
TJ = 125 °C; L = 1 mH; VCC = 600 V
Rg = 5
Ω; VGE = 15 V
Fig. 14 - Typical Switching Time vs. IC
TJ = 125 °C; L = 1 mH; VCC = 600 V
Rg = 5
Ω; VGE = 15 V
Fig. 15 - Typical Energy Loss vs. Rg
TJ = 125 °C; L = 1 mH; VCC = 600 V
ICE = 6 A; VGE = 15 V
Fig. 16 - Typical Switching Time vs. Rg
TJ = 150 °C; L = 1 mH; VCC = 600 V
ICE = 6 A; VGE = 15 V
Fig. 17 - Typical Diode Irr vs. IF
TJ = 150 °C
Fig. 18 - Typical Diode Irr vs. Rg
TJ = 150 °C; IF = 5.0 A
0
1020304050
0
0.5
1
1.5
2
2.5
Eon
Eoff
I C (A)
Energy
(mJ)
010
20
30
40
50
1
10
100
1000
td (off)
td (on)
tr
tf
I C (A)
Switching
time
(ns)
0
1020304050
0.2
0.4
0.6
0.8
1
1.2
Eon
Eoff
Energy
(mJ)
R G ( Ω )
0
1020
30
4050
1
10
100
1000
td (off)
td (on)
tr
tf
R G ( Ω )
Switching
time
(ns)
0
5
10
15
20
25
30
35
IF (A)
0
10
20
30
40
I
R
)
A(
RG = 5.0Ω
RG =10 Ω
RG =30 Ω
RG =50 Ω
0
10
20
30
40
50
60
RG (Ω)
0
10
20
30
40
I
R
)
A(
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