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參數(shù)資料
| 型號： | IRF630 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 4/9頁 |
| 文件大小： | 97K |
| 代理商： | IRF630 |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
IRF630, IRF630S
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); V
GS
≥
10 V
Fig.3. Safe operating area
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
)
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
)
Normalised Power Derating, PD (%)
0
10
20
30
40
50
60
70
80
90
100
0
25
50
75
100
125
150
175
Mounting Base temperature, Tmb (C)
0.01
0.1
1
10
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
Pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
single pulse
D = 0.5
0.2
0.1
0.05
0.02
tp
D = tp/T
D
P
T
Normalised Current Derating, ID (%)
0
10
20
30
40
50
60
70
80
90
100
0
25
50
75
100
125
150
175
Mounting Base temperature, Tmb (C)
0
1
2
3
4
5
6
7
8
9
10
0
0.2
0.4
0.6
Drain-Source Voltage, VDS (V)
0.8
1
1.2
1.4
1.6
1.8
2
Drain Current, ID (A)
Tj = 25 C
5 V
VGS = 10V
5.5 V
6 V
8 V
4.5 V
0.1
1
10
100
1
10
100
1000
Drain-Source Voltage, VDS (V)
Peak Pulsed Drain Current, IDM (A)
D.C.
100 ms
10 ms
RDS(on) = VDS/ ID
1 ms
tp = 10 us
100 us
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0
1
2
3
5
6
7
8
9
10
Drain4
Drain-Source On Resistance, RDS(on) (Ohms)
VGS = 10V
Tj = 25 C
8 V
5 V
6 V
5.5 V
4.5 V
August 1999
4
Rev 1.100
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRF630 | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220 |
| IRF630 | 制造商:STMicroelectronics 功能描述:MOSFET N 200V 9A TO-220 制造商:STMicroelectronics 功能描述:MOSFET, N, 200V, 9A, TO-220 制造商:STMicroelectronics 功能描述:MOSFET, N, 200V, 9A, TO-220, Transistor Polarity:N Channel, Continuous Drain Current Id:9A, Drain Source Voltage Vds:200V, On Resistance Rds(on):400mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Dissipation , RoHS Compliant: Yes |
| IRF630_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 200V - 0.35ヘ - 9A TO-220/TO-220FP Mesh overlay⑩ II Power MOSFET |
| IRF630_R4941 | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF630A | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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