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參數(shù)資料
| 型號(hào)： | 24 - 32 GHz LNA |
| 廠商： | SIEMENS AG |
| 英文描述： | 24 - 32 GHz GaAs Low Noise Amplifier MMIC(24 - 32 GHz砷化鎵微波低噪聲放大器) |
| 中文描述： | 24 - 32千兆赫砷化鎵單片低噪聲放大器（24 - 32千兆赫砷化鎵微波低噪聲放大器） |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 106K |
| 代理商： | 24 - 32 GHZ LNA |
Data Sheet
1
2001-01-01
Description
This two-stage GaAs MMIC Low Noise Amplifier is intended for use in radio link
applications. It provides a gain of 18 dB with a noise figure of less than 3 dB. The device
is fabricated with a 0.13 micron Pseudomorphic InGaAs/AlGaAs/GaAs High Electron
Mobility Transistor processing technology.
24 - 32 GHz GaAs Low Noise
Amplifier MMIC
Preliminary Data Sheet
24 - 32 GHz LNA
Two-Stage Monolithic Microwave Integrated Circuit (MMIC) HEMT Amplifier
(coplanar design)
Input/Output matched to 50
Frequency range: 24 GHz to 32 GHz
Gain > 18 dB
Noise Figure < 3 dB
Chip size: 2.15 mm
×
1.45 mm
ESD
:
E
lectro
s
tatic
d
ischarge sensitive device, observe handling precautions!
Type
Marking
Ordering Code
Package
24 - 32 GHz LNA
–
on request
Chip
Electrical Specifications
(
V
G
= 0.1 V,
V
D
= 5 V,
I
D
= 85 mA)
Parameter
Limit Values
Unit
Test Conditions
min.
typ.
max.
Frequency Range
24
–
32
GHz
–
Gain
–
18
–
dB
–
Noise Figure
–
3
–
dB
–
1 dB gain compression
–
12
–
dBm
–
Input Return Loss
–
< – 10
–
dB
–
Output Return Loss
–
< – 10
–
dB
–
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