參數(shù)資料
型號(hào): 24 - 32 GHz LNA
廠商: SIEMENS AG
英文描述: 24 - 32 GHz GaAs Low Noise Amplifier MMIC(24 - 32 GHz砷化鎵微波低噪聲放大器)
中文描述: 24 - 32千兆赫砷化鎵單片低噪聲放大器(24 - 32千兆赫砷化鎵微波低噪聲放大器)
文件頁(yè)數(shù): 3/4頁(yè)
文件大?。?/td> 106K
代理商: 24 - 32 GHZ LNA
GaAs Components
24 - 32 GHz LNA
Data Sheet
3
2001-01-01
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain voltage
V
D
V
G
5
V
Gate voltage
2
+ 0.8
V
Technology Data
Parameter
Value
Chip thickness
95
μ
m
2.15 mm
×
1.45 mm
100
μ
m
×
100
μ
m/90
μ
m
×
60
μ
m
Chip size
DC/RF Bond pads
Bond pad material
Au (plated gold)
Chip passivation
SiN (silicon nitride)
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