參數(shù)資料
型號(hào)： 25AA128
廠商： Microchip Technology Inc.
英文描述： 128K SPI Bus Serial EEPROM
中文描述： 128K的SPI總線串行EEPROM
文件頁(yè)數(shù)： 11/26頁(yè)
文件大?。?/td> 432K
代理商： 25AA128
2007 Microchip Technology Inc.
DS21831C-page 11
25AA128/25LC128
2.6
Write Status Register (WRSR)
The Write Status Register (
WRSR
) instruction allows the
user to write to the nonvolatile bits in the STATUS reg-
ister as shown in Table 2-2. The user is able to select
one of four levels of protection for the array by writing
to the appropriate bits in the STATUS register. The
array is divided up into four segments. The user has the
ability to write-protect none, one, two, or all four of the
segments of the array. The partitioning is controlled as
shown in Table 2-3.
The Write-Protect Enable (WPEN) bit is a nonvolatile
bit that is available as an enable bit for the WP pin. The
Write-Protect (WP) pin and the Write-Protect Enable
(WPEN) bit in the STATUS register control the
programmable hardware write-protect feature. Hard-
ware write protection is enabled when WP pin is low
and the WPEN bit is high. Hardware write protection is
disabled when either the WP pin is high or the WPEN
bit is low. When the chip is hardware write-protected,
only writes to nonvolatile bits in the STATUS register
are disabled. See Table 2-4 for a matrix of functionality
on the WPEN bit.
See Figure 2-7 for the
WRSR
timing sequence.
TABLE 2-3:
ARRAY PROTECTION
FIGURE 2-7:
WRITE STATUS REGISTER TIMING SEQUENCE (
WRSR
)
BP1
BP0
Array Addresses
Write-Protected
0
0
0
1
none
upper 1/4
(3000h-3FFFh)
upper 1/2
(2000h-3FFFh)
all
(0000h-3FFFh)
1
0
1
1
SO
SI
CS
9
10
11
12
13
14
15
0
1
0
0
0
0
0
0
7
6
5
4
2
1
0
Instruction
Data to STATUS Register
High-Impedance
SCK
0
2
3
4
5
6
7
1
8
3
Note:
An internal write cycle (T
WC
) is initiated on the rising edge of CS after a valid write STATUS register
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