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參數(shù)資料
| 型號： | 25GB120DN2 |
| 英文描述： | Complete, 100ksps, 8-Channel, 12-Bit Data Acquisition Systems |
| 中文描述： | IGBT模塊 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 234K |
| 代理商： | 25GB120DN2 |
3
Oct-20-1997
BSM 25 GB 120 DN2
Electrical Characteristics
, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
Switching Characteristics, Inductive Load at
T
j
= 125 °C
Turn-on delay time
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 25 A
R
Gon
= 47
Rise time
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 25 A
R
Gon
= 47
Turn-off delay time
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 25 A
R
Goff
= 47
Fall time
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 25 A
R
Goff
= 47
t
d(on)
-
75
150
ns
t
r
-
65
130
t
d(off)
-
420
600
t
f
-
50
75
Free-Wheel Diode
Diode forward voltage
I
F
= 25 A,
V
GE
= 0 V,
T
j
= 25 °C
I
F
= 25 A,
V
GE
= 0 V,
T
j
= 125 °C
Reverse recovery time
I
F
= 25 A,
V
R
= -600 V,
V
GE
= 0 V
d
i
F
/
dt
= -800 A/μs,
T
j
= 125 °C
Reverse recovery charge
I
F
= 25 A,
V
R
= -600 V,
V
GE
= 0 V
d
i
F
/
dt
= -800 A/μs
T
j
= 25 °C
T
j
= 125 °C
V
F
-
-
1.8
2.3
-
2.8
V
t
rr
-
0.13
-
μs
Q
rr
-
-
6
2.3
-
-
μC
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