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參數(shù)資料
| 型號： | 28F002BV-B |
| 廠商： | Intel Corp. |
| 英文描述： | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| 中文描述： | 2兆位SmartVoltage啟動塊閃存系列 |
| 文件頁數(shù)： | 16/37頁 |
| 文件大小： | 455K |
| 代理商： | 28F002BV-B |
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28F002BC 2-MBIT BOOT BLOCK FLASH MEMORY
E
16
PRELIMINARY
Read Status Register (70H)
This is one of three commands that is executable
while the WSM is operating.
After this command is
written, a read of the device will output the contents
of the status register, regardless of the address
presented to the device.
The device automatically
enters this mode after program or erase has
completed.
Clear Status Register (50H)
The WSM can set the Program Status and Erase
Status bits in the status register to
“1,” but it cannot
clear them to “0.”
The status register is operated in this fashion for
two reasons, the first is synchronization. Since the
WSM does not know when the host CPU has read
the status register, it would not know when to clear
the status bits. Second, if the CPU is programming
a string of bytes, it may be more efficient to query
the status register after programming the string.
Thus, if any errors exist while programming the
string,
the
status
register
accumulated error status. The Clear Status
Register command clears the Program, Erase, and
V
PP
Status bits to “0.”
will
return
the
Program Setup (40H)
This command simply sets the CUI into a state
such that the next write will load the Address and
Data registers. After this command is executed, the
outputs default to the status register. Two
consecutive Read Array commands (FFH) are
required to reset to Read Array after the Program
Setup command.
Program
The write following the Program Setup command
will latch address and data. Also, the CUI initiates
the WSM to begin execution of the program
algorithm. The device outputs status register data
when OE# is enabled
.
To read array data after the
program operation is completed, a Read Array
command is required.
Erase Setup (20H)
The Erase Setup command prepares the CUI for
the Erase Confirm command. No other action is
taken. If the next command is not an Erase Confirm
command, then the CUI will set both the Program
Status and Erase Status bits of the status register
to a “1,” place the device into read status register
mode, and wait for another command.
Erase Confirm (D0H)
If the previous command was an Erase Setup
command, then the CUI will enable the WSM to
erase, at the same time closing the address and
data latches, and respond only to the Read Status
Register and Erase Suspend commands. While the
WSM is executing, the device will output status
register data when OE# is toggled low. Status
register data can only be updated by toggling either
OE# or CE#. If the previous command was not the
Erase Setup command (20H), the Erase Confirm
command is ignored. Status Register bits 4 and 5
are both set to indicate an invalid command
sequence.
Erase Suspend (B0H)
This command is only valid while the WSM is
executing an erase operation. At all other times,
this command is ignored. After this command has
been executed, the CUI will set a signal that directs
the WSM to suspend erase operations. While
waiting for the erase to be suspended, the CUI
responds only to the Read Status Register
command or to the Erase Resume command. Once
the WSM has reached the Suspend state, it will set
an output in the CUI that allows the CUI to respond
to the Read Array, Read Status Register, and Erase
Resume commands. In this mode, the CUI will not
respond to any other commands. The WSM will
also set the WSM and Erase Suspend status bits to
a “1.” The WSM will continue to run, idling in the
Suspend state, regardless of the state of all input
control pins except V
PP
and RP#. If V
PP
is taken
below V
PPLK
, the V
PP
low status bit (SR.3) will be
set and the WSM will abort the suspended erase
operation. If active, RP# will immediately shut down
the WSM and the remainder of the chip. During a
suspend operation, the data and address latches
will remain closed, but the address pads are able to
drive the address into the read path.
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PDF描述 |
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| 28F004B3 | 3 Volt Advanced Boot Block Flash Memory(3 V,4M位高級引導(dǎo)塊閃速存儲器) |
| 28F004S3 | BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT |
| 28F004S5 | BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT |
| 28F004SC | BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F002BV-T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| 28F002BV-T/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SmartVoltage Boot Block Flash Memory Fa |
| 28F002BX-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:28F002BX-B - 2-MBIT (128K x 16. 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| 28F002BX-T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:28F002BX-T - 2-MBIT (128K x 16. 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| 28F004B5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SMART 5 BOOT BLOCK. FLASH MEMORY FAMILY 2. 4. 8 MBIT |
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