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參數(shù)資料
| 型號： | 28F008SA-L |
| 廠商： | Intel Corp. |
| 英文描述： | 8-MBIT (1 MBIT x 8) FLASHFILETM MEMORY |
| 中文描述： | 8兆（1兆比特× 8）FLASHFILETM記憶 |
| 文件頁數(shù)： | 1/49頁 |
| 文件大?。?/td> | 408K |
| 代理商： | 28F008SA-L |
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E
PRELIMINARY
May 1997
Order Number: 290605-001
n
Flexible SmartVoltage Technology
2.7V
–3.6V Program/Erase
2.7V–3.6V Read Operation
12V V
PP
Fast Production
Programming
n
2.7V or 1.8V I/O Option
Reduces Overall System Power
n
Optimized Block Sizes
Eight 8-Kbyte Blocks for Data,
Top or Bottom Locations
Up to Thirty-One 64-Kbyte Blocks
for Code
n
High Performance
2.7V–3.6V: 120 ns Max Access Time
n
Block Locking
V
CC
-Level Control through WP#
n
Low Power Consumption
20 mA Maximum Read Current
n
Absolute Hardware-Protection
V
PP
= GND Option
V
CC
Lockout Voltage
n
Extended Temperature Operation
–40°C to +85°C
n
Supports Code plus Data Storage
Optimized for FDI, Flash Data
Integrator Software
Fast Program Suspend Capability
Fast Erase Suspend Capability
n
Extended Cycling Capability
10,000 Block Erase Cycles
n
Automated Byte Program and Block
Erase
Command User Interface
Status Registers
n
SRAM-Compatible Write Interface
n
Automatic Power Savings Feature
n
Reset/Deep Power-Down
1 μA I
CC
Typical
Spurious Write Lockout
n
Standard Surface Mount Packaging
48-Ball
μ
BGA* Package
40-Lead TSOP Package
n
Footprint Upgradeable
Upgradeable from 2-, 4- and 8-Mbit
Boot Block
n
ETOX V (0.4
μ)
Flash Technology
n
x8-Only Input/Output Architecture
For Space-Constrained 8-bit
Applications
The new Smart 3 Advanced Boot Block, manufactured on Intel’s latest 0.4μ technology, represents a feature-
rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability
(2.7V read, program and erase) with high-speed, low-power operation. Several new features have been
added, including the ability to drive the I/O at 1.8V, which significantly reduces system active power and
interfaces to 1.8V controllers. A new blocking scheme enables code and data storage within a single device.
Add to this the Intel-developed Flash Data Integrator (FDI) software and you have the most cost-effective,
monolithic code plus data storage solution on the market today. Smart 3 Advanced Boot Block Byte-Wide
products will be available in 40-lead TSOP and 48-ball μBGA* packages. Additional information on this
product family can be obtained by accessing Intel’s WWW page: http://www.intel.com/design/flcomp
SMART 3 ADVANCED BOOT BLOCK
BYTE-WIDE
8-MBIT (1024K x 8), 16-MBIT (2056K x 8)
FLASH MEMORY FAMILY
28F008B3, 28F016B3
相關PDF資料 |
PDF描述 |
|---|---|
| 28F008S3 | 3 V FlashFile Memory(3V閃速存儲器) |
| 28F016S3 | 3 V FlashFile Memory(3V閃速存儲器) |
| 28F008S5 | 8-MBIT 5 VOLT FlashFile Memory(8M位5V閃速存儲器) |
| 28F016S5 | 16-MBIT 5V FlashFile Memory(16M位5V閃速存儲器) |
| 28F008SC | 8-MBIT SmartVoltage FlashFile Memory(8M位智能電壓閃速存儲器) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 28F008SAT-ZW | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 28F008SC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4. 8. AND 16 MBIT |
| 28F010 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1024K (128K x 8) CMOS FLASH MEMORY |
| 28F0101024K | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F010 1024K (128K X 8) CMOS FLASH MEMORY |
| 28F010120EI | 制造商:Advanced Micro Devices 功能描述: |
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