參數(shù)資料
型號: 28F160C2
廠商: Intel Corp.
英文描述: 2.4V Advanced+ Boot Block Flash Memory(2.4V高級引導(dǎo)塊閃速存儲器)
中文描述: 2.4V的高級啟動塊閃存(2.4V的高級引導(dǎo)塊閃速存儲器)
文件頁數(shù): 48/56頁
文件大?。?/td> 283K
代理商: 28F160C2
28F800C2, 28F160C2
E
48
PRELIMINARY
C.5
SYSTEM INTERFACE INFORMATION
Table C6. System Interface Information
Offset
Length
Description
Add.
Hex
Code
Value
1Bh
1
V
CC
logic supply minimum program/erase voltage
bits 0
–3 BCD 100 mV
bits 4–7 BCD volts
1B:
--24
2.4 V
1Ch
1
V
CC
logic supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
1C:
--30
3.0 V
1Dh
1
V
PP
[programming] supply minimum program/erase
voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
1D:
--B4
11.4 V
1Eh
1
V
PP
[programming] supply maximum program/erase
voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
1E:
--C6
12.6 V
1Fh
1
“n” such that typical single word program time-out = 2
n
μs
1F:
--05
32 μs
20h
1
“n” such that typical max. buffer write time-out = 2
n
μs
20:
--00
NA
21h
1
“n” such that typical block erase time-out = 2
n
ms
21:
--0A
1 s
22h
1
“n” such that typical full chip erase time-out = 2
n
ms
22:
--00
NA
23h
1
“n” such that maximum word program time-out = 2
typical
n
times
23:
--04
512 μs
24h
1
“n” such that maximum buffer write time-out = 2
typical
n
times
24:
--00
NA
25h
1
“n” such that maximum block erase time-out = 2
typical
n
times
25:
--03
8 s
26h
1
“n” such that maximum chip erase time-out = 2
typical
n
times
26:
--00
NA
相關(guān)PDF資料
PDF描述
28F800C2 2.4V Advanced+ Boot Block Flash Memory(2.4V高級引導(dǎo)塊閃速存儲器)
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