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參數(shù)資料
| 型號： | 29F004B-70 |
| 廠商： | Macronix International Co., Ltd. |
| 英文描述： | 4M-BIT [512KX8] CMOS FLASH MEMORY |
| 中文描述： | 4分位[512KX8]的CMOS閃存 |
| 文件頁數(shù)： | 5/39頁 |
| 文件大?。?/td> | 599K |
| 代理商： | 29F004B-70 |
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5
MX29F004T/B
P/N:PM0554
REV. 1.9, OCT. 19, 2004
AUTOMATIC PROGRAMMING
The MX29F004T/B is byte programmable using the Au-
tomatic Programming algorithm. The Automatic Pro-
gramming algorithm makes the external system do not
need to have time out sequence nor to verify the data
programmed. The typical chip programming time at room
temperature of the MX29F004T/B is less than 4 sec-
onds.
AUTOMATIC CHIP ERASE
The entire chip is bulk erased using 10 ms erase pulses
according to MXIC's Automatic Chip Erase algorithm.
Typical erasure at room temperature is accomplished in
less than 4 second. The Automatic Erase algorithm
automatically programs the entire array prior to electri-
cal erase. The timing and verification of electrical erase
are controlled internally within the device.
AUTOMATIC SECTOR ERASE
The MX29F004T/B is sector(s) erasable using MXIC's
Auto Sector Erase algorithm. Sector erase modes allow
sectors of the array to be erased in one erase cycle.
The Automatic Sector Erase algorithm automatically
programs the specified sector(s) prior to electrical erase.
The timing and verification of electrical erase are con-
trolled internally within the device.
AUTOMATIC PROGRAMMING ALGORITHM
MXIC's Automatic Programming algorithm requires the
user to only write program set-up commands (including
2 unlock write cycle and A0H) and a program command
(program data and address). The device automatically
times the programming pulse width, provides the pro-
gram verification, and counts the number of sequences.
A status bit similar to DATA polling and a status bit tog-
gling between consecutive read cycles, provide feed-
back to the user as to the status of the programming
operation.
AUTOMATIC ERASE ALGORITHM
MXIC's Automatic Erase algorithm requires the user to
write commands to the command register using stan-
dard microprocessor write timings. The device will auto-
matically pre-program and verification the entire array.
Then the device automatically times the erase pulse
width, provides the erase verify, and counts the number
of sequences. A status bit toggling between consecu-
tive read cycles provides feedback to the user as to the
status of the programming operation.
Register contents serve as inputs to an internal state-
machine which controls the erase and programming cir-
cuitry. During write cycles, the command register inter-
nally latches address and data needed for the program-
ming and erase operations. During a system write cycle,
addresses are latched on the falling edge of WE or CE,
whichever happens later, and data are latched on the
rising edge of WE or CE, whichever happens first.
MXIC's Flash technology combines years of EPROM
experience to produce the highest levels of quality, reli-
ability, and cost effectiveness. The MX29F004T/B elec-
trically erases all bits simultaneously using Fowler- tun-
neling. The bytes are programmed by using the EPROM
programming mechanism of hot electron injection.
During a program cycle, the state-machine will control
the program sequences and command register will not
respond to any command set. During a Sector Erase
cycle, the command register will only respond to Erase
Suspend command. After Erase Suspend is completed,
the device stays in read mode. After the state machine
has completed its task, it will allow the command regis-
ter to respond to its full command set.
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| 29F004B-90 | 4M-BIT [512KX8] CMOS FLASH MEMORY |
| 29F004T-55 | 4M-BIT [512KX8] CMOS FLASH MEMORY |
| 29F004T-70 | 4M-BIT [512KX8] CMOS FLASH MEMORY |
| 29F004T-90 | 4M-BIT [512KX8] CMOS FLASH MEMORY |
| 29F016-12 | 16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 29F004B-90 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:4M-BIT [512KX8] CMOS FLASH MEMORY |
| 29F004T-55 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:4M-BIT [512KX8] CMOS FLASH MEMORY |
| 29F004T-70 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:4M-BIT [512KX8] CMOS FLASH MEMORY |
| 29F004T-90 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:4M-BIT [512KX8] CMOS FLASH MEMORY |
| 29F010 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory |
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