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參數(shù)資料
| 型號(hào)： | 29F004B-70 |
| 廠商： | Macronix International Co., Ltd. |
| 英文描述： | 4M-BIT [512KX8] CMOS FLASH MEMORY |
| 中文描述： | 4分位[512KX8]的CMOS閃存 |
| 文件頁數(shù)： | 6/39頁 |
| 文件大?。?/td> | 599K |
| 代理商： | 29F004B-70 |
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6
MX29F004T/B
P/N:PM0554
REV. 1.9, OCT. 19, 2004
First Bus
Cycle
Addr
XXXH
RA
555H
555H
Second Bus
Cycle
Addr
Third Bus
Cycle
Addr
Fourth Bus
Cycle
Addr
Fifth Bus
Cycle
Addr
Sixth Bus
Cycle
Addr
Command
Bus
Cycle
1
1
4
4
Data
F0H
RD
AAH
AAH
Data
Data
Data
Data
Data
Reset
Read
Read Silicon ID
Chip Protect Verify
2AAH 55H
2AAH 55H
555H
555H
90H
90H
ADI
SA
x02
PA
555H AAH
555H AAH
DDI
00H
01H
PD
Program
Chip Erase
Sector Erase
Sector Erase Suspend
Sector Erase Resume
Unlock for chip
protect/unprotect
4
6
6
1
1
6
555H
555H
555H
XXXH
XXXH
555H
AAH
AAH
AAH
B0H
30H
AAH
2AAH 55H
2AAH 55H
2AAH 55H
555H
555H
555H
A0H
80H
80H
2AAH 55H
2AAH 55H
555H 10H
SA
30H
2AAH 55H
555H
80H
555H AAH
2AAH 55H
555H 20H
TABLE1. SOFTWARE COMMAND DEFINITIONS
Note:
1. ADI = Address of Device identifier; A1=0, A0 = 0 for manufacture code,A1=0, A0 =1 for device code A2~A18=Do not care.
(Refer to table 3)
DDI = Data of Device identifier : C2H for manufacture code, 45H/46H for device code.
X = X can be VIL or VIH
RA=Address of memory location to be read.
RD=Data to be read at location RA.
2. PA = Address of memory location to be programmed.
PD = Data to be programmed at location PA.
SA = Address to the sector to be erased.
3. The system should generate the following address patterns: 555H or 2AAH to Address A10~A0.
Address bit A11~A18=X=Don't care for all address commands except for Program Address (PA) and Sector Address (SA).
Write Sequence may be initiated with A11~A18 in either state.
4. For Chip Protect Verify Operation :If read out data is 01H, it means the chip has been protected. If read out data is 00H, it
means the chip is still not being protected.
COMMAND DEFINITIONS
Device operations are selected by writing specific ad-
dress and data sequences into the command register.
Writing incorrect address and data values or writing them
in the improper sequence will reset the device to the
read mode. Table 1 defines the valid register command
sequences. Note that the Erase Suspend (B0H) and
Erase Resume (30H) commands are valid only while the
Sector Erase operation is in progress. Either of the two
reset command sequences will reset the device (when
applicable).
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| 29F004B-90 | 4M-BIT [512KX8] CMOS FLASH MEMORY |
| 29F004T-55 | 4M-BIT [512KX8] CMOS FLASH MEMORY |
| 29F004T-70 | 4M-BIT [512KX8] CMOS FLASH MEMORY |
| 29F004T-90 | 4M-BIT [512KX8] CMOS FLASH MEMORY |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 29F004B-90 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:4M-BIT [512KX8] CMOS FLASH MEMORY |
| 29F004T-55 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:4M-BIT [512KX8] CMOS FLASH MEMORY |
| 29F004T-70 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:4M-BIT [512KX8] CMOS FLASH MEMORY |
| 29F004T-90 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:4M-BIT [512KX8] CMOS FLASH MEMORY |
| 29F010 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory |
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