參數(shù)資料
型號(hào)： 29F004T-55
廠商： Macronix International Co., Ltd.
英文描述： 4M-BIT [512KX8] CMOS FLASH MEMORY
中文描述： 4分位[512KX8]的CMOS閃存
文件頁(yè)數(shù)： 14/39頁(yè)
文件大?。?/td> 599K
代理商： 29F004T-55
14
MX29F004T/B
P/N:PM0554
REV. 1.9, OCT. 19, 2004
29F004T/B-55 29F004T/B-70 29F004T/B-90 29F004T/B-12
Symbol PARAMETER
tACC
Address to Output Delay
tCE
CE to Output Delay
tOE
OE to Output Delay
tDF
OE High to Output Float
(Note 1)
tOH
Address to Output hold
MIN.
MAX.
55
55
40
30
MIN.
MAX.
70
70
40
30
MIN.
MAX.
90
90
40
40
MIN.
MAX.
120
120
50
40
UNIT CONDITIONS
ns
CE=OE=VIL
ns
OE=VIL
ns
CE=VIL
ns
CE=VIL
0
0
0
0
0
0
0
0
ns
CE=OE=VIL
NOTE:
1. tDF is defined as the time at which the output achieves the
open circuit condition and data is no longer driven.
TEST CONDITIONS:
Input pulse levels: 0.45V/2.4V
Input rise and fall times is equal to or less than 10ns
Output load: 1 TTL gate + 100pF (Including scope and jig)
Reference levels for measuring timing: 0.8V, 2.0V
NOTES:
1. VIL min. = -1.0V for pulse width is equal to or less than 50 ns.
VIL min. = -2.0V for pulse width is equal to or less than 20 ns.
2. VIH max. = VCC + 1.5V for pulse width is equal to or less
than 20 ns.
If VIH is over the specified maximum value, read operation
cannot be guaranteed.
READ OPERATION
DC CHARACTERISTICS (TA = 0
°
C TO 70
°
C, VCC = 5V
±
10%)
SYMBOL
ILI
ILO
ISB1
ISB2
ICC1
ICC2
VIL
VIH
VOL
VOH1
VOH2
PARAMETER
Input Leakage Current
Output Leakage Current
Standby VCC current
MIN.
TYP
MAX.
1
10
1
5
30
50
0.8
VCC + 0.3
0.45
UNIT
uA
uA
mA
uA
mA
mA
V
V
V
V
V
CONDITIONS
VIN = GND to VCC
VOUT = GND to VCC
CE = VIH
CE = VCC + 0.3V
IOUT = 0mA, f=5MHz
IOUT = 0mA, f=10MHz
1
Operating VCC current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage(TTL)
Output High Voltage(CMOS)
-0.3
(NOTE 1)
2.0
IOL = 2.1mA
IOH = -2mA
IOH = -100uA,VCC=VCC min
2.4
Vcc-0.4
CAPACITANCE (TA = 25
o
C, f = 1.0 MHz)
SYMBOL
CIN1
CIN2
COUT
PARAMETER
Input Capacitance
Control Pin Capacitance
Output Capacitance
MIN.
TYP
MAX.
8
12
12
UNIT
pF
pF
pF
CONDITIONS
VIN = 0V
VIN = 0V
VOUT = 0V
AC CHARACTERISTICS (TA = 0
o
C to 70
o
C, VCC = 5V
±
10%)
相關(guān)PDF資料
PDF描述
29F004T-70 4M-BIT [512KX8] CMOS FLASH MEMORY
29F004T-90 4M-BIT [512KX8] CMOS FLASH MEMORY
29F016-12 16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY
29F016-90 16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY
29F022B-12 2M-BIT[256K x 8]CMOS FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
29F004T-70 制造商:MCNIX 制造商全稱:Macronix International 功能描述:4M-BIT [512KX8] CMOS FLASH MEMORY
29F004T-90 制造商:MCNIX 制造商全稱:Macronix International 功能描述:4M-BIT [512KX8] CMOS FLASH MEMORY
29F010 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory
29F01045JC 制造商: 功能描述: 制造商:Advanced Micro Devices 功能描述: 制造商:undefined 功能描述:
29F010-45JC 制造商: 功能描述: 制造商:undefined 功能描述:
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