參數(shù)資料
型號: 29F016-12
廠商: Macronix International Co., Ltd.
英文描述: 16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY
中文描述: 1,600位[2米x 8]的CMOS平等部門閃存
文件頁數(shù): 16/37頁
文件大?。?/td> 888K
代理商: 29F016-12
16
P/N:PM0590
REV. 1.4, NOV. 21, 2002
MX29F016
Erase/Program Operations
29F016-90
29F016-12
SYMBOL
PARAMETER
MIN.
MAX.
MIN.
MAX.
UNIT
CONDITIONS
tOES
OE setup time
50
50
ns
tCWC
Command programming cycle
90
120
ns
tCEP
WE programming pulse width
45
50
ns
tCEPH1
WE programming pulse width High
20
20
ns
tCEPH2
WE programming pulse width High
20
20
ns
tAS
Address setup time
0
0
ns
tAH
Address hold time
45
50
ns
tDS
Data setup time
45
50
ns
tDH
Data hold time
0
0
ns
tCESC
CE setup time before command write
0
0
ns
tDF
Output disable time (Note 1)
30
30
ns
tAETC
Total erase time in auto chip erase(Note2,3)
32(TYP.) 256
32(TYP.)256
s
tAETB
Total erase time in auto sector erase(Note2,3)
4(TYP.)
30
4(TYP.) 30
s
tAVT
Byte programming time in auto verify(Note2,3)
7(TYP.)
300
7(TYP.) 300
us
tBAL
Block address load time
80
80
us
tCH
CE Hold Time
0
0
ns
tCS
CE setup to WE going low
0
0
ns
tVLHT
Voltge Transition Time
4
4
us
tOESP
OE Setup Time to WE Active
4
4
us
tWPP1
Write pulse width for sector protect
10
10
us
tWPP2
Write pulse width for sector unprotect
12
12
ms
NOTES:
1. tDF defined as the time at which the output achieves the open circuit condition and data is no longer driven.
2. Numbers are sampled, not 100% tested.
3. Typical values are measured at 25
o
C,VCC=5.0V.
AC CHARACTERISTICS TA = -40
o
C to 85
o
C, VCC = 5V
±
10%
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