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參數(shù)資料
| 型號： | 29F016-12 |
| 廠商： | Macronix International Co., Ltd. |
| 英文描述： | 16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY |
| 中文描述： | 1,600位[2米x 8]的CMOS平等部門閃存 |
| 文件頁數(shù)： | 5/37頁 |
| 文件大小： | 888K |
| 代理商： | 29F016-12 |
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5
P/N:PM0590
REV. 1.4, NOV. 21, 2002
MX29F016
AUTOMATIC PROGRAMMING
The MX29F016 s byte programmable using the Automatic
Programming algorithm. The Automatic Programming
algorithm makes the external system do not need to have
time out sequence nor to verify the data programmed.
The typical chip programming time at room temperature
of the MX29F016 is less than 15 seconds.
AUTOMATIC CHIP ERASE
The entire chip is bulk erased using 10 ms erase pulses
according to MXIC's Automatic Chip Erase algorithm.
Typical erasure at room temperature is accomplished in
less than 19 seconds. The Automatic Erase algorithm
automatically programs the entire array prior to electrical
erase. The timing and verification of electrical erase are
controlled internally within the device.
AUTOMATIC SECTOR ERASE
The MX29F016 is sector(s) erasable using MXIC's
Auto Sector Erase algorithm. Sector erase modes
allow sectors of the array to be erased in one erase
cycle. The Automatic Sector Erase algorithm
automatically programs the specified sector(s) prior to
electrical erase. The timing and verification of
electrical erase are controlled internally within the
device.
AUTOMATIC PROGRAMMING ALGORITHM
MXIC's Automatic Programming algorithm require the
user to only write program set-up commands (including
2 unlock write cycle and A0H) and a program command
(program data and address). The device automatically
times the programming pulse width, provides the program
verification, and counts the number of sequences. A
status bit similar to DATA polling and a status bit toggling
between consecutive read cycles, provide feedback to
the user as to the status of the programming operation.
AUTOMATIC ERASE ALGORITHM
MXIC's Automatic Erase algorithm requires the user to
write commands to the command register using standard
microprocessor write timings. The device will
automatically pre-program and verify the entire array.
Then the device automatically times the erase pulse
width, provides the erase verification, and counts the
number of sequences. A status bit toggling between
consecutive read cycles provides feedback to the user
as to the status of the programming operation.
Register contents serve as inputs to an internal state-
machine which controls the erase and programming
circuitry. During write cycles, the command register
internally latches address and data needed for the
programming and erase operations. During a system
write cycle, addresses are latched on the falling edge,
and data are latched on the rising edge of WE .
MXIC's Flash technology combines years of EPROM
experience to produce the highest levels of quality,
reliability, and cost effectiveness. The MX29F016
electrically erases all bits simultaneously using Fowler-
Nordheim tunneling. The bytes are programmed by
using the EPROM programming mechanism of hot
electron injection.
During a program cycle, the state-machine will control
the program sequences and command register will not
respond to any command set. During a Sector Erase
cycle, the command register will only respond to Erase
Suspend command. After Erase Suspend is completed,
the device stays in read mode. After the state machine
has completed its task, it will allow the command register
to respond to its full command set.
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| 29F016-90 | 16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 29F016-90 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY |
| 29F016D70E4D | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 29F016D-70E4D | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 29F020 | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| 29F022B-12 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT[256K x 8]CMOS FLASH MEMORY |
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