- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371438 > 29F022T-70 (Macronix International Co., Ltd.) 2M-BIT[256K x 8]CMOS FLASH MEMORY PDF資料下載
參數(shù)資料
| 型號： | 29F022T-70 |
| 廠商： | Macronix International Co., Ltd. |
| 英文描述： | 2M-BIT[256K x 8]CMOS FLASH MEMORY |
| 中文描述： | 200萬位[256K × 8]的CMOS閃存 |
| 文件頁數(shù)： | 13/46頁 |
| 文件大小： | 606K |
| 代理商： | 29F022T-70 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁當(dāng)前第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁
13
P/N:PM0556
REV. 1.3, NOV. 11, 2002
MX29F022/022NT/B
ABSOLUTE MAXIMUM RATINGS
RATING
Ambient Operating Temperature
Storage Temperature
Applied Input Voltage
Applied Output Voltage
VCC to Ground Potential
A9
VALUE
0
o
C to 70
o
C
-65
o
C to 125
o
C
-0.5V to 7.0V
-0.5V to 7.0V
-0.5V to 7.0V
-0.5V to 13.5V
NOTICE:
Stresses greater than those listed under ABSOLUTE MAXI-
MUM RATINGS may cause permanent damage to the de-
vice. This is a stress rating only and functional operational
sections of this specification is not implied. Exposure to ab-
solute maximum rating conditions for extended period may
affect reliability.
NOTICE:
Specifications contained within the following tables are sub-
ject to change.
Performing a read operation with A1=VIH, it will produce
00H at data outputs (Q0-Q7) for an unprotected chip. It
is noted that all sectors are unprotected after the chip
unprotect algorithm is complete.
CHIP PROTECTION WITHOUT 12V SYSTEM
The MX29F022T/B also feature a hardware chip
protection method in a system without 12V power sup-
ply. The programming equipment do not need to supply
12 volts to protect all sectors. The details are shown in
chip protect algorithm and waveform.
CHIP UNPROTECT WITHOUT 12V SYSTEM
The MX29F022T/B also feature a hardware chip
unprotection method in a system without 12V power sup-
ply. The programming equipment do not need to supply
12 volts to unprotect all sectors. The details are shown
in chip unprotect algorithm and waveform.
POWER-UP SEQUENCE
The MX29F022T/B powers up in the Read only mode. In
addition, the memory contents may only be altered after
successful completion of a two-step command sequence.
Vpp and Vcc power up sequence is not required.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 29F022T-90 | 2M-BIT[256K x 8]CMOS FLASH MEMORY |
| 29F040-12 | 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY |
| 29F040-55 | 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY |
| 29F040-70 | 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY |
| 29F040-90 | 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 29F022T-90 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT[256K x 8]CMOS FLASH MEMORY |
| 29F0303-0T0-10 | 功能描述:信號調(diào)節(jié) 266ohms 100MHz 8A Thru-hole RoHS:否 制造商:EPCOS 產(chǎn)品:Duplexers 頻率:782 MHz, 751 MHz 頻率范圍: 電壓額定值: 帶寬: 阻抗:50 Ohms 端接類型:SMD/SMT 封裝 / 箱體:2.5 mm x 2 mm 工作溫度范圍:- 30 C to + 85 C 封裝:Reel |
| 29F0318-0SR | 功能描述:FERRITE 6A 83 OHM SMD RoHS:否 類別:濾波器 >> 鐵氧體磁珠和芯片 系列:- 標準包裝:1,000 系列:EMI1812 頻率對應(yīng)阻抗:120 歐姆 @ 100MHz 額定電流:200mA DC 電阻(DCR):最大 400 毫歐 濾波器類型:差模 - 單線 封裝/外殼:1812（4532 公制） 安裝類型:表面貼裝 包裝:帶卷 (TR) 高度（最大）:0.069"（1.75mm） 尺寸/尺寸:0.177" L x 0.126" W（4.50mm x 3.20mm） 其它名稱:Q1712807A |
| 29F0318-1SR (900 PC REEL) | 制造商:Laird Technologies Inc 功能描述:LEADED,4.8X4.5MM,3 LINES,-55-+125,T&R - Tape and Reel |
| 29F0318-1SR-10 | 功能描述:信號調(diào)節(jié) 119ohms 100MHz 6A Thru-hole RoHS:否 制造商:EPCOS 產(chǎn)品:Duplexers 頻率:782 MHz, 751 MHz 頻率范圍: 電壓額定值: 帶寬: 阻抗:50 Ohms 端接類型:SMD/SMT 封裝 / 箱體:2.5 mm x 2 mm 工作溫度范圍:- 30 C to + 85 C 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。