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參數(shù)資料
| 型號： | 29F0408RPFS |
| 廠商： | MAXWELL TECHNOLOGIES |
| 元件分類： | PROM |
| 英文描述： | 32 Megabit (4M x 8-Bit) Flash Memory |
| 中文描述： | 4M X 8 FLASH 5V PROM, 35 ns, DFP44 |
| 封裝： | DFP-44 |
| 文件頁數(shù)： | 7/33頁 |
| 文件大?。?/td> | 941K |
| 代理商： | 29F0408RPFS |
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Alldatasheetsaresubjecttochangewithoutnotice
2002MaxwellTechnologies
Allrightsreserved.
32Megabit(4Mx8-Bit)FlashMemory
29F0408
11.08.02Rev2
NANDF
LASH
T
ECHNICAL
N
OTES
InvalidBlock(s)
Invalidblocks are definedas blocks thatcontainone ormore invalidbits whose reliability is notguaranteedby the
manufacturer. Typically, aninvalidblockwillcontainasinglebadbit. Theinformationregardingtheinvalidblock(s) is
calledas theinvalidblockinformation. Theinvalidblockinformationis writtentothe1storthe2ndpageoftheinvalid
block(s) with00hdata. Devices withinvalidblock(s) have thesame quality levelas devices withall validblocks and
have the same AC and DC characteristics. An invalid block(s) does not affect the performance of valid block(s)
becauseitis isolatedfromthebitlineandthecommonsourcelinebyaselecttransistor. Thesystemdesignmustbe
abletomaskouttheinvalidblock(s) viaaddressmapping.The1stblockoftheNANDFlash, however, isfullyguaran-
teedtobeavalidblock.
IdentifyingInvalidBlock(s)
Alldevicelocations areerased(FFh) exceptlocations wheretheinvalidblockinformationis writtenpriortoshipping.
Since the invalidblockinformationis alsoerasable inmostcases, itis impossible torecoverthe informationonce it
has beenerased. Therefore, the systemmustbe able torecognize the invalidblock(s) basedonthe original invalid
CE lowtostatusoutput
t
CSTO
RHW
Y
t
WHR
t
READID
t
RST
9, 10, 11
--
45
ns
RE hightoWE low
9, 10, 11
0
--
ns
WE hightoRE low
9, 10, 11
60
--
ns
RE accesstime(readID)
9, 10, 11
--
35
ns
Deviceresettingtime(read/program/erase/after
erasesuspend)
1. Not Tested
9, 10, 11
--
5/10/500
μs
2. IfCE goeshighwithin30nsaftertherisingedgeofthelastRE, R/BwillnotreturntoV
OL
.
3. ThetimetoReadydependsonthevalueofthepull-upresistortiedtoR/Bpin.
4. Tobreakthesequentialreadcycle,CE mustbeheldhighforlongerthant
CEH
.
T
ABLE
12. 29F0408V
ALID
B
LOCK1,2
1. Thedevicemayincludevalidblocks.Invalidblocksaredefinedasblocksthatcontainoneormorebadbits.Donottryto
accesstheseinvalidblocksforprogramanderase.Duringitslifetimeof10yearsand/or1mllionprogram/erasecycles, the
mnimumnumberofvalidblocksareguaranteedthoughitsinitialnumbercouldbereduced.(Refertofollowingtechnicalnote)
2. The1stblock, whichisplacedonthe00hblockaddress, isguaranteedtobeavalidblock.
P
ARAMETER
S
YMBOL
M
IN
T
YP
M
AX
U
NIT
ValidBlockNumber
N
VB
502
508
512
Blocks
T
ABLE
11.29F0408AC C
HARACTERISTICS FOR
O
PERATION
(V
CC
=5V ± 10%, T
A
=-40
TO
+125
°
C,
UNLESS OTHERWISE NOTED
)
P
ARAMETER
S
YMBOL
S
UBGROUPS
M
IN
M
AX
U
NIT
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