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參數(shù)資料
| 型號： | 29F040C-55 |
| 廠商： | Macronix International Co., Ltd. |
| 英文描述： | 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY |
| 中文描述： | 4分位[為512k × 8] CMOS單電壓5V只等于部門閃存 |
| 文件頁數(shù)： | 4/38頁 |
| 文件大?。?/td> | 592K |
| 代理商： | 29F040C-55 |
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P/N:PM1201
REV. 1.0, DEC. 20, 2005
MX29F040C
AUTOMATIC PROGRAMMING
The MX29F040C is byte programmable using the Auto-
matic Programming algorithm. The Automatic Program-
ming algorithm makes the external system do not need
to have time out sequence nor to verify the data pro-
grammed. The typical chip programming time at room
temperature of the MX29F040C is less than 4.5 sec-
onds.
AUTOMATIC CHIP ERASE
The entire chip is bulk erased using 10 ms erase pulses
according to MXIC's Automatic Chip Erase algorithm.
Typical erasure at room temperature is accomplished in
less than 4 second. The Automatic Erase algorithm au-
tomatically programs the entire array prior to electrical
erase. The timing and verification of electrical erase are
controlled internally within the device.
AUTOMATIC SECTOR ERASE
The MX29F040C is sector(s) erasable using MXIC's
Auto Sector Erase algorithm. Sector erase modes
allow sectors of the array to be erased in one erase
cycle. The Automatic Sector Erase algorithm auto-
matically programs the specified sector(s) prior to
electrical erase. The timing and verification of electri-
cal erase are controlled internally within the device.
AUTOMATIC PROGRAMMING ALGORITHM
MXIC's Automatic Programming algorithm require the user
to only write program set-up commands (including 2 un-
lock write cycle and A0H) and a program command (pro-
gram data and address). The device automatically times
the programming pulse width, provides the program veri-
fication, and counts the number of sequences. A status
bit similar to Data# Polling and a status bit toggling be-
tween consecutive read cycles, provide feedback to the
user as to the status of the programming operation.
AUTOMATIC ERASE ALGORITHM
MXIC's Automatic Erase algorithm requires the user to
write commands to the command register using stand-
ard microprocessor write timings. The device will auto-
matically pre-program and verify the entire array. Then
the device automatically times the erase pulse width,
provides the erase verification, and counts the number of
sequences. A status bit toggling between consecutive
read cycles provides feedback to the user as to the sta-
tus of the programming operation.
Register contents serve as inputs to an internal state-
machine which controls the erase and programming cir-
cuitry. During write cycles, the command register inter-
nally latches address and data needed for the program-
ming and erase operations. During a system write cycle,
addresses are latched on the falling edge of WE# or
CE#, whichever happens later, and data are latched on
the rising edge of WE# or CE#, whichever happens first.
MXIC's Flash technology combines years of EPROM
experience to produce the highest levels of quality, relia-
bility, and cost effectiveness. The MX29F040C electri-
cally erases all bits simultaneously using Fowler-Nord-
heim tunneling. The bytes are programmed by using the
EPROM programming mechanism of hot electron injec-
tion.
During a program cycle, the state-machine will control
the program sequences and command register will not
respond to any command set. During a Sector Erase
cycle, the command register will only respond to Erase
Suspend command. After Erase Suspend is completed,
the device stays in read mode. After the state machine
has completed its task, it will allow the command regis-
ter to respond to its full command set.
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| 29F040C-70 | 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY |
| 29F040C-90 | 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 29F040C-70 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY |
| 29F040C-90 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY |
| 29F0418-0SR (900PC RL) | 制造商:Laird Technologies Inc 功能描述:SMD,6.1X4.5MM,6A I MAX,83 OHM,GULL WING,4 LINES,-55-+125,BLK - Tape and Reel |
| 29F0418-0SR-10 | 功能描述:信號調(diào)節(jié) 83ohms 100MHz 6A Thru-hole RoHS:否 制造商:EPCOS 產(chǎn)品:Duplexers 頻率:782 MHz, 751 MHz 頻率范圍: 電壓額定值: 帶寬: 阻抗:50 Ohms 端接類型:SMD/SMT 封裝 / 箱體:2.5 mm x 2 mm 工作溫度范圍:- 30 C to + 85 C 封裝:Reel |
| 29F0418-1SR | 功能描述:FERRITE 6A 119 OHM SMD RoHS:否 類別:濾波器 >> 鐵氧體磁珠和芯片 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:EMI1812 頻率對應(yīng)阻抗:120 歐姆 @ 100MHz 額定電流:200mA DC 電阻(DCR):最大 400 毫歐 濾波器類型:差模 - 單線 封裝/外殼:1812（4532 公制） 安裝類型:表面貼裝 包裝:帶卷 (TR) 高度（最大）:0.069"（1.75mm） 尺寸/尺寸:0.177" L x 0.126" W（4.50mm x 3.20mm） 其它名稱:Q1712807A |
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