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參數(shù)資料
| 型號： | 29F040C-55 |
| 廠商： | Macronix International Co., Ltd. |
| 英文描述： | 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY |
| 中文描述： | 4分位[為512k × 8] CMOS單電壓5V只等于部門閃存 |
| 文件頁數(shù)： | 8/38頁 |
| 文件大小： | 592K |
| 代理商： | 29F040C-55 |
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8
P/N:PM1201
REV. 1.0, DEC. 20, 2005
MX29F040C
SECTOR ERASE COMMANDS
The Automatic Sector Erase does not require the device
to be entirely pre-programmed prior to executing the Au-
tomatic Set-up Sector Erase command and Automatic
Sector Erase command. Upon executing the Automatic
Sector Erase command, the device will automatically pro-
gram and verify the sector(s) memory for an all-zero data
pattern. The system is not required to provide any con-
trol or timing during these operations.
When the sector(s) is automatically verified to contain
an all-zero pattern, a self-timed sector erase and verify
begin. The erase and verify operations are complete
when the data on Q7 is "1" and the data on Q6 stops
toggling for two consecutive read cycles, at which time
the device returns to the Read mode. The system is not
required to provide any control or timing during these op-
erations.
When using the Automatic Sector Erase algorithm, note
that the erase automatically terminates when adequate
erase margin has been achieved for the memory array
(no erase verification command is required). Sector erase
is a six-bus cycle operation. There are two "unlock" write
cycles. These are followed by writing the set-up com-
mand 80H. Two more "unlock" write cycles are then fol-
lowed by the sector erase command 30H. The sector
address is latched on the falling edge of WE# or CE#,
whichever happens later, while the command (data) is
latched on the rising edge of WE# or CE#, whichever
happens first. Sector addresses selected are loaded
into internal register on the sixth falling edge of WE# or
CE#, whichever happens later. Each successive sector
load cycle started by the falling edge of WE# or CE#,
whichever happens later must begin within 30us from
the rising edge of the preceding WE# or CE#, whichever
happens first. Otherwise, the loading period ends and
internal auto sector erase cycle starts. (Monitor Q3 to
determine if the sector erase timer window is still open,
see section Q3, Sector Erase Timer.) Any command other
than Sector Erase (30H) or Erase Suspend (B0H) during
the time-out period resets the device to read mode.
Status
Q7
Q6
Q5
Q3
Q2
Note1
Q7#
0
1
Note2
0
0
0
Byte Program in Auto Program Algorithm
Auto Erase Algorithm
Toggle
Toggle
No
Toggle
Data
N/A
1
N/A
No Toggle
Toggle
Toggle
Erase Suspend Read
(Erase Suspended Sector)
Erase Suspend Read
(Non-Erase Suspended Sector)
Erase Suspend Program
In Progress
Erase Suspended Mode
Data
Data
Data
Data
Q7#
Q7#
0
Q7#
Toggle
Toggle
Toggle
Toggle
0
1
1
1
N/A
N/A
1
N/A
N/A
Byte Program in Auto Program Algorithm
Auto Erase Algorithm
Time Limits Erase Suspend Program
No Toggle
Toggle
N/A
Exceeded
TABLE 4. Write Operation Status
Note:
1. Q7 and Q2 require a valid address when reading status information. Refer to the appropriate subsection for further
details.
2. Q5 switches to '1' when an Auto Program or Auto Erase operation has exceeded the maximum timing limits.
See "Q5:Exceeded Timing Limits " for more information.
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相關(guān)代理商/技術(shù)參數(shù) |
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| 29F040C-70 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY |
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