參數(shù)資料
型號: 29F040C-90
廠商: Macronix International Co., Ltd.
英文描述: 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY
中文描述: 4分位[為512k × 8] CMOS單電壓5V只等于部門閃存
文件頁數(shù): 5/38頁
文件大小: 592K
代理商: 29F040C-90
5
P/N:PM1201
REV. 1.0, DEC. 20, 2005
MX29F040C
First Bus
Cycle
Addr
XXXH
RA
555H
555H
Second Bus
Cycle
Addr
Third Bus
Cycle
Addr
Fourth Bus
Cycle
Addr
Fifth Bus
Cycle
Addr
Sixth Bus
Cycle
Addr
Command
Bus
Cycle
1
1
4
4
Data
F0H
RD
AAH
AAH
Data
Data
Data
Data
Data
Reset
Read
Read Silicon ID
Sector Protect Verify
2AAH 55H
2AAH 55H
555H
555H
90H
90H
ADI
(SA)X 00H
02
PA
555H
555H
DDI
01H
PD
AAH
AAH
Program
Chip Erase
Sector Erase
Sector Erase Suspend
Sector Erase Resume
Unlock for sector
protect/unprotect
4
6
6
1
1
6
555H
555H
555H
XXXH
XXXH
555H
AAH
AAH
AAH
B0H
30H
AAH
2AAH 55H
2AAH 55H
2AAH 55H
555H
555H
555H
A0H
80H
80H
2AAH 55H
2AAH 55H
555H 10H
SA
30H
2AAH 55H
555H
80H
555H
AAH
2AAH 55H
555H 20H
TABLE 1. SOFTWARE COMMAND DEFINITIONS
Note:
1. ADI = Address of Device identifier; A1=0, A0 = 0 for manufacture code,A1=0, A0 = 1 for device code A2-A18=Do
not care.
(Refer to table 3)
DDI = Data of Device identifier : C2H for manufacture code, A4H for device code.
X = X can be VIL or VIH
RA=Address of memory location to be read.
RD=Data to be read at location RA.
2. PA = Address of memory location to be programmed.
PD = Data to be programmed at location PA.
SA = Address to the sector to be erased.
3. The system should generate the following address patterns: 555H or 2AAH to Address A10~A0 .
Address bit A11~A18=X=Don't care for all address commands except for Program Address (PA) and Sector
Address (SA). Write Sequence may be initiated with A11~A18 in either state.
4. For Sector Protect Verify Operation : If read out data is 01H, it means the sector has been protected. If read out data
is 00H, it means the sector is still not being protected.
COMMAND DEFINITIONS
Device operations are selected by writing specific address and data sequences into the command register. Writing
incorrect address and data values or writing them in the improper sequence will reset the device to the read mode.
Table 1 defines the valid register command sequences. Note that the Erase Suspend (B0H) and Erase Resume (30H)
commands are valid only while the Sector Erase operation is in progress. Either of the two reset command sequences
will reset the device (when applicable).
相關PDF資料
PDF描述
29F080-12 8M-BIT [1024K x 8] CMOS EQUAL SECTOR FLASH MEMORY
29F080-70 8M-BIT [1024K x 8] CMOS EQUAL SECTOR FLASH MEMORY
29F080-90 8M-BIT [1024K x 8] CMOS EQUAL SECTOR FLASH MEMORY
29F1610 The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
29F1610A The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
相關代理商/技術參數(shù)
參數(shù)描述
29F0418-0SR (900PC RL) 制造商:Laird Technologies Inc 功能描述:SMD,6.1X4.5MM,6A I MAX,83 OHM,GULL WING,4 LINES,-55-+125,BLK - Tape and Reel
29F0418-0SR-10 功能描述:信號調(diào)節(jié) 83ohms 100MHz 6A Thru-hole RoHS:否 制造商:EPCOS 產(chǎn)品:Duplexers 頻率:782 MHz, 751 MHz 頻率范圍: 電壓額定值: 帶寬: 阻抗:50 Ohms 端接類型:SMD/SMT 封裝 / 箱體:2.5 mm x 2 mm 工作溫度范圍:- 30 C to + 85 C 封裝:Reel
29F0418-1SR 功能描述:FERRITE 6A 119 OHM SMD RoHS:否 類別:濾波器 >> 鐵氧體磁珠和芯片 系列:- 標準包裝:1,000 系列:EMI1812 頻率對應阻抗:120 歐姆 @ 100MHz 額定電流:200mA DC 電阻(DCR):最大 400 毫歐 濾波器類型:差模 - 單線 封裝/外殼:1812(4532 公制) 安裝類型:表面貼裝 包裝:帶卷 (TR) 高度(最大):0.069"(1.75mm) 尺寸/尺寸:0.177" L x 0.126" W(4.50mm x 3.20mm) 其它名稱:Q1712807A
29F0418-1SR (900PC RL) 制造商:Laird Technologies Inc 功能描述:SMD,6.1X4.5MM,6A I MAX,119 OHM,GULL WING,4 LINES,-55-+125 - Tape and Reel
29F0418-1SR-10 功能描述:EMI/RFI 抑制器及鐵氧體 119ohms 100MHz 6A Thru-hole RoHS:否 制造商:Fair-Rite 產(chǎn)品:Ferrite Cores 阻抗:365 Ohms 容差: 最大直流電流: 最大直流電阻: 工作溫度范圍:- 55 C to + 125 C 封裝 / 箱體: 端接類型:SMD/SMT