參數(shù)資料
型號(hào)： 29F400B-12TC
廠商： Electronic Theatre Controls, Inc.
英文描述： 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
中文描述： 4MEGABIT（為512k × 8 / 256K × 16）5VOLT扇區(qū)擦除的CMOS閃存
文件頁數(shù)： 15/38頁
文件大?。?/td> 240K
代理商： 29F400B-12TC
BRIGHT Preliminary BM29F400T/BM29F400B
Microelectronics
Inc.
A Winbond Company
Publication Release Date: May 1999
- 15 -
Revision A1
DQ3
Sector Erase Timer
After the completion of the initial Sector Erase command sequence, the sector erase time-out window
will begin. DQ3 will remain low until the time-out window is closed. Data Polling and Toggle Bit are
valid after the initial Sector Erase command sequence.
If Data Polling or the Toggle Bit indicates the device has been written with a valid erase command,
DQ3 maybe used to determine if the Sector Erase time-out window is still open. If DQ3 is a logical
"1", the internally controlled erase cycle has begun. Attempts to write subsequent command to the
device will be ignored until the erase operation is completed as indicated by Data Polling or Toggle
Bit. If DQ3 is a logical "0", the device will accept additional Sector Erase commands. To ensure the
command has been accepted, the system software should check the status of DQ3 prior to and
following each subsequent Sector Erase command. If DQ3 were high on the second status check, the
command may not have been accepted. Refer to Table 7: Write Operation Status Flags.
Write Operations Status
Table 7. Write Operation Status Flags
(1)
Status
DQ7
DQ6
DQ5
DQ3
In
Byte/Word Programming Operation
/DQ7
Toggle
0
N/A
Progress
Chip or Sector Erase Operation
0
Toggle
0
1
Erase Suspend Mode
(Non-Erase Suspended Sector)
Data
Data
Data
Data
Exceeded
Byte/Word Programming Operation
/DQ7
Toggle
1
0
Time Limits
Chip or Sector Erase Operation
0
Toggle
1
1
Notes: DQ0, DQ1, DQ4 are reserve pins for future use.
RY/BY
Ready/Busy Status
The BM29F400 provides a RY/BY open-drain output pin as a way to indicate to the host system that
an Internal Programming or Erase operation is either in progress or has been completed. If the RY/BY
output is low, the device is busy with either a Programming or Erase operation. If the RY/BY output is
high, the device is ready to accept a Read, Programming, or Erase command. When the RY/BY pin
is low, the device will not accept any additional Programming or Erase commands with the exception
of the Erase Suspend command. If the BM29F400 is placed in an Erase Suspend mode, the RY/BY
output will be high.
During a programming operation, the RY/BY pin is driven low after the rising edge of the fourth
WE
pulse. During an erase operation, the RY/BY pin is driven low after the rising edge of the sixth
WE
pulse. The RY/BY pin will indicate a busy condition during the
RESET
pulse. Refer to the timing
waveforms for the RY/BY status pin for further clarification. The RY/BY pin is high in the Standby
mode.
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
29F400B-12TI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400B-90PC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400B-90PI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400B-90TC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400B-90TI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
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