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參數資料
| 型號： | 29F400B-12TC |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY |
| 中文描述： | 4MEGABIT（為512k × 8 / 256K × 16）5VOLT扇區(qū)擦除的CMOS閃存 |
| 文件頁數： | 20/38頁 |
| 文件大?。?/td> | 240K |
| 代理商： | 29F400B-12TC |
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BRIGHT Preliminary BM29F400T/BM29F400B
Microelectronics
Inc.
- 20 -
START
Read Byte(DQ0-DQ7)
Addr=Don't care
DQ6=Toggle
NO
DQ5=1
YES
YES
Fail
Pass
YES
Read Byte(DQ0-DQ7)
Addr=Don't care
DQ6=Toggle
NO
NO
Figure 4. Toggle Bit Algorithm
Note:
DQ6 is rechecked even if DQ5 = logical "1" because DQ6 may stop toggling at the same time as DQ5 changing to a logical
"1".
Absolute Maximum Ratings
PARAMETER
RATING
UNIT
Storage Temperature
Plastic Packages
Ambient Temperature
With Power Applied
Voltages with Respect to Ground
All pins except A9 (Note 1)
Vcc (Note 1)
A9 (Note 2)
-65 to +125
°
C
-55 to +125
°
C
-2 to +7
-2 to +7
-2 to +14
200
V
Output Short Circuit Current (Note 4)
mA
Notes :
1. Minimum DC voltage on input or I/O pins is -0.5V.
During voltage transitions, inputs may overshoot Vss to -2.0V for periods of up to 20 nS. Maximum DC voltage on output
I/O pins is Vcc +0.5V. During Voltage transitions, outputs may overshoot to Vcc + 2.0V for periods up to 20 nS.
2. Minimum DC input voltage on A9 pin is -0.5V. During voltage transitions, A9 may overshoot Vss to -2.0V for periods of up to
20 nS. Maximum DC input voltage on A9 is + 12.5V which may overshoot to 14.0V for periods of up to 20 nS.
3. No more than one output shorted at a time. Duration of the short circuit should not be greater than one second.
Operating Ranges
and
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| 29F400B-12TI | 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY |
| 29F400B-90PC | 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY |
| 29F400B-90PI | 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY |
| 29F400B-90TC | 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 29F400B-12TI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY |
| 29F400B-90PC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY |
| 29F400B-90PI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY |
| 29F400B-90TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY |
| 29F400B-90TI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY |
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