參數(shù)資料
型號： 29F400B-90PI
廠商： Electronic Theatre Controls, Inc.
英文描述： 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
中文描述： 4MEGABIT（為512k × 8 / 256K × 16）5VOLT扇區(qū)擦除的CMOS閃存
文件頁數(shù)： 12/38頁
文件大小： 240K
代理商： 29F400B-90PI
BRIGHT Preliminary BM29F400T/BM29F400B
Microelectronics
Inc.
- 12 -
Table 6. Command Definitions
Command
Sequence
Bus Write
Cycles
First Bus Write
Cycle
Second Bus
Write Cycle
Third Bus Write
Cycle
Fourth Bus Write
Cycle
Fifth Bus Write
Cycle
Sixth Bus Write
Cycle
Reset/Read
Required
addr
Data
addr
Data
addr
Data
addr
Data
addr
Data
addr
Data
Reset/Read
1
XXXXH
F0H
Reset
Word
4
5555H
AAH
2AAAH
55H
5555H
F0H
RA
RD
/Read
Byte
AAAAH
5555H
AAAAH
Electronic
Word
4
5555H
AAH
2AAAH
55H
5555H
90H
01H
(7)
2223H
(T Device ID)
22ABH
(B Device ID)
ID
Byte
AAAAH
5555H
AAAAH
23H
(T Device ID)
ABH
(B Device ID)
Program
Word
4
5555H
AAH
2AAAH
55H
5555H
A0H
PA
PD
Byte
AAAAH
5555H
AAAAH
Chip
Word
6
5555H
AAH
2AAAH
55H
5555H
80H
5555H
AAH
2AAAH
55H
5555H
10H
Erase
Byte
AAAAH
5555H
AAAAH
AAAAH
5555H
AAAAH
Sector
Word
6
5555H
AAH
2AAAH
55H
5555H
80H
5555H
AAH
2AAAH
55H
SA
30H
Erase
Byte
AAAAH
5555H
AAAAH
AAAAH
5555H
Erase
Word
1
XXXXH
B0H
Suspend
Byte
Erase
Word
1
XXXXH
30H
Resume
Byte
Notes:
1. Bus operations are defined in Tables 1 and 2.
2. For a Command Sequence, address bit A15 = X = Don't Care for all address commands except for Program Address (PA) and
Sector Address (SA).
3. RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of the WE pulse.
PD = Data to be programmed at location PA. Data is latched on the rising edge of WE .
SA = Address of sector to be erased. (See Table 4 for top boot and Table 5 for bottom boot.)
4. The Erase Suspend (B0H) and Erase Resume (30H) commands are valid only while the Sector Erase operation is in
progress.
5. Reading from, and programming to, non-erasing sectors is allowed in the Erase Suspend mode.
6. The System should generate the following address patterns:
Word Mode: 5555H or 2AAAH to addresses A0 - A14.
Byte Mode: AAAAH or 5555H to addresses A-1 - A14.
7. Address 00H returns the manufacturer's ID code (Bright Microelectronics - ADH), address 01H returns the device ID code.
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the user to interrupt a Sector Erase operation and read data
from or to a sector that is not being erased. The Erase Suspend command is applicable only during
Sector Erase operation, including, but not limited to, sector erase time-out period after any Sector
Erase commands (30H) have been initiated.
Writing the Erase Suspend command during the time-out will result in immediate termination of the
time-out period. Any subsequent writes of the Sector Erase command will be taken as the Erase
相關(guān)PDF資料
PDF描述
29F400B-90TC 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400B-90TI 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400T-12PC 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400T-12PI 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400T-12TC 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
29F400B-90TC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400B-90TI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400BB 制造商: 功能描述: 制造商:undefined 功能描述:
29F400BT-70EC 制造商: 功能描述: 制造商:undefined 功能描述:
29F400BT-70SC 制造商: 功能描述: 制造商:undefined 功能描述:
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*