參數(shù)資料
型號(hào): 29F400T-12PI
廠商: Electronic Theatre Controls, Inc.
英文描述: 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
中文描述: 4MEGABIT(為512k × 8 / 256K × 16)5VOLT扇區(qū)擦除的CMOS閃存
文件頁數(shù): 31/38頁
文件大?。?/td> 240K
代理商: 29F400T-12PI
BRIGHT Preliminary BM29F400T/BM29F400B
Microelectronics
Inc.
A Winbond Company
Publication Release Date: May 1999
- 31 -
Revision A1
Start
RESET = V
(Note 1)
Perform Erase or
Program Operations
RESET = V
Temporary Sector
Unprotect Completed
(Note 2)
ID
IH
Figure 17. Temporary Sector Unprotect Algorithm
Notes:
1. All protected sector groups unprotected.
2. All previously protected sector groups are protected again.
5V
t
VIDR
Program or Erase Command Sequence
RESET
12V
CE
WE
RY/BY
t
RSP
Figure 18. Temporary Unprotect Timing Diagram
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29F400T-12TC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400T-12TI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400T-90PC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400T-90PI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400T-90TC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY