參數(shù)資料
型號(hào): 29LV017B-90
廠商: Macronix International Co., Ltd.
英文描述: 16M-BIT [2Mx8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
中文描述: 1,600位[2Mx8] CMOS單電壓3V時(shí)僅閃存
文件頁數(shù): 31/55頁
文件大?。?/td> 355K
代理商: 29LV017B-90
31
P/N:PM1086
MX29LV017B
REV. 1.1, DEC. 07, 2004
All data in chip are erased. External erase verification is
not required because data is verified automatically by
internal control circuit. Erasure completion can be veri-
fied by Data# Polling or toggle bit checking after auto-
matic erase starts. Device outputs 0 during erasure
and 1 after erasure on Q7.(Q6 is for toggle bit; see toggle
bit, Data# Polling, timing waveform)
Figure 6. AUTOMATIC CHIP ERASE TIMING WAVEFORM
AUTOMATIC CHIP ERASE TIMING WAVEFORM
tWC
Address
OE#
CE#
55h
XXXh
XXXh
10h
ProIn
VA
VA
Note :
VA=Valid Address for reading status data(see "Write Operation Status").
tAS
tAH
tGHWL
tCH
tWP
tDS
tDH
tWHWH2
Read Status Data
Erase Command Sequence(last two cycle)
tBUSY
tRB
tCS
tWPH
tVCS
WE#
Data
RY/BY#
VCC
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