參數(shù)資料
型號: 29LV040C-90
廠商: Macronix International Co., Ltd.
英文描述: 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY
中文描述: 4分位[為512k × 8] CMOS單電壓3V只等于部門閃存
文件頁數(shù): 22/52頁
文件大?。?/td> 499K
代理商: 29LV040C-90
22
P/N:PM1149
MX29LV040C
REV. 1.3, APR. 24, 2006
AC CHARACTERISTICS
TA = -40
o
C to 85
o
C, VCC = 2.7V~3.6V
Table 10. Erase/Program Operations
29LV040C-55R
29LV040C-70
29LV040C-90
SYMBOL PARAMETER
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
Unit
tWC
Write Cycle Time (Note 1)
55
70
90
ns
tAS
Address Setup Time
0
0
0
ns
tAH
Address Hold Time
45
45
45
ns
tDS
Data Setup Time
35
35
45
ns
tDH
Data Hold Time
0
0
0
ns
tOES
Output Enable Setup Time
0
0
0
ns
tGHWL
Read Recovery Time Before Write
0
0
0
ns
(OE# High to WE# Low)
tCS
CE# Setup Time
0
0
0
ns
tCH
CE# Hold Time
0
0
0
ns
tWP
Write Pulse Width
35
35
35
ns
tWPH
Write Pulse Width High
30
30
30
ns
tWHWH1 Programming Operation (Note 2)
9(TYP.)
9(TYP.)
9(TYP.)
us
tWHWH2 Sector Erase Operation (Note 2)
0.7(TYP.)
0.7(TYP.)
0.7(TYP.)
sec
tVCS
VCC Setup Time (Note 1)
50
50
50
us
tBAL
Sector Address Load Time
50
50
50
us
NOTES:
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more information.
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