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參數資料
| 型號： | 29LV040C-90 |
| 廠商： | Macronix International Co., Ltd. |
| 英文描述： | 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY |
| 中文描述： | 4分位[為512k × 8] CMOS單電壓3V只等于部門閃存 |
| 文件頁數： | 7/52頁 |
| 文件大?。?/td> | 499K |
| 代理商： | 29LV040C-90 |
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7
P/N:PM1149
MX29LV040C
REV. 1.3, APR. 24, 2006
ADDRESS
DESCRIPTION
CE#
OE#
WE# A18 A15 A9
A8
A6
A5
A1
A0
Q0~Q7
A16 A10
A7
A2
Read
L
L
H
AIN
Dout
Write
L
H
L
AIN
DIN(3)
Reset
X
X
X
X
High Z
Output Disable
L
H
H
X
High Z
Standby
Vcc
±
0.3V
X
X
X
High Z
Sector Protect
L
H
L
SA
X
X
X
L
X
H
L
X
Chip Unprotect
L
H
L
X
X
X
X
H
X
H
L
X
Sector Protection Verify
L
L
H
SA
X
VID
X
L
X
H
L
CODE(5)
TABLE 4. MX29LV040C BUS OPERATION
NOTES:
1. Manufacture and device codes may also be accessed via a command register write sequence. Refer to Table 3.
2. VID is the Silicon-ID-Read high voltage, 11.5V to 12.5V.
3. Refer to Table 3 for valid Data-In during a write operation.
4. X can be VIL or VIH, L=Logic Low=VIL, H=Logic High=VIH.
5. Code=00H/XX00H means unprotected.
Code=01H/XX01H means protected.
6. A18~A13=Sector address for sector protect.
sequences. Note that the Erase Suspend (B0H) and
Erase Resume (30H) commands are valid only while the
Sector Erase operation is in progress.
COMMAND DEFINITIONS
Device operations are selected by writing specific ad-
dress and data sequences into the command register.
Writing incorrect address and data values or writing them
in the improper sequence will reset the device to the
read mode. Table 3 defines the valid register command
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