參數(shù)資料
型號: 29LV400C-90
廠商: Macronix International Co., Ltd.
英文描述: 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
中文描述: 4分位[為512k × 8 / 256K × 16] CMOS單電壓3V時僅閃存
文件頁數(shù): 49/68頁
文件大?。?/td> 906K
代理商: 29LV400C-90
49
P/N:PM1155
MX29LV400C T/B
REV. 1.5, APR. 24, 2006
Table 14. TEMPORARY SECTOR UNPROTECT
Parameter Std. Description
Test Setup
All Speed Options Unit
tVIDR
VID Rise and Fall Time (See Note)
Min
500
ns
tRSP
RESET# Setup Time for Temporary Sector Unprotect
Min
4
us
Note:
Not 100% tested
Figure 28. TEMPORARY SECTOR UNPROTECT TIMING DIAGRAM
Figure 29. Q6 vs Q2 for Erase and Erase Suspend Operations
RESET#
CE#
WE#
RY/BY#
tVIDR
tVIDR
Program or Erase Command Sequence
12V
0 or Vcc
0 or Vcc
tRSP
NOTES:
The system can use OE# or CE# to toggle Q2/Q6, Q2 toggles only when read at an address within an erase-suspended
WE#
Enter Embedded
Erasing
Erase
Suspend
Enter Erase
Suspend Program
Erase
Suspend
Program
Erase Suspend
Read
Erase
Erase
Resume
Erase
Complete
Erase
Q6
Q2
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