參數(shù)資料
型號(hào): 29LV800BB-90
廠商: Macronix International Co., Ltd.
英文描述: 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
中文描述: 800萬位[1Mx8/512K x16] CMOS單電壓3V時(shí)僅閃存
文件頁數(shù): 51/63頁
文件大小: 765K
代理商: 29LV800BB-90
51
P/N:PM1062
MX29LV800BT/BB
REV. 1.3, DEC. 20, 2004
TABLE 15. TEMPORARY SECTOR UNPROTECTED
Parameter Std. Description
Test Setup
All Speed Options Unit
tVIDR
VID Rise and Fall Time (See Note)
Min
500
ns
tRSP
RESET# Setup Time for Temporary Sector Unprotected
Min
4
us
Note:
Not 100% tested
FIGURE 26. TEMPORARY SECTOR UNPROTECTED TIMING DIAGRAM
FIGURE 27. Q6 vs Q2 for Erase and Erase Suspend Operations
RESET#
CE#
WE#
RY/BY#
tVIDR
tVIDR
Program or Erase Command Sequence
12V
0 or Vcc
0 or Vcc
tRSP
NOTES:
The system can use OE or CE to toggle Q2/Q6, Q2 toggles only when read at an address within an erase-suspended
WE#
Enter Embedded
Erasing
Erase
Suspend
Enter Erase
Suspend Program
Erase
Suspend
Program
Erase Suspend
Read
Erase
Erase
Resume
Erase
Complete
Erase
Q6
Q2
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