參數(shù)資料
型號： 29LV800BE
廠商： Fujitsu Limited
英文描述： 8M (1M x 8/512 K x 16) BIT
中文描述： 8米（3米x五百一十二分之八畝× 16）位
文件頁數(shù)： 2/58頁
文件大?。?/td> 292K
代理商： 29LV800BE
DS05-20888-6E
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
8 M (1 M
×
8/512 K
×
16) BIT
MBM29LV800TE
60/70/90
/MBM29LV800BE
60/70/90
I
DESCRIPTION
The MBM29LV800TE/BE are a 8 M-bit, 3.0 V-only Flash memory organized as 1 M bytes of 8 bits each or
512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin TSOP (1) , 48-pin CSOP and 48-
ball FBGA package. These devices are designed to be programmed in a system with the standard system 3.0 V
V
CC
supply. 12.0 V V
PP
and 5.0 V V
CC
are not required for write or erase operations. The devices can also be
reprogrammed in standard EPROM programmers.
(Continued)
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PRODUCT LINE UP
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PACKAGES
Part No.
MBM29LV800TE/BE
70
Ordering Part No.
V
CC
=
3.3 V
V
CC
=
3.0 V
60
60
90
Max Address Access Time (ns)
70
90
Max CE Access Time (ns)
60
70
90
Max OE Access Time (ns)
30
30
35
48-pin Plastic TSOP (1)
48-pin Plastic CSOP
48-ball Plastic FBGA
(FPT-48P-M19)
(LCC-48P-M03)
(BGA-48P-M20)
+
0.3 V
+
0.6 V
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