參數(shù)資料
型號： 29LV800BT-90
廠商： Macronix International Co., Ltd.
英文描述： 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
中文描述： 800萬位[1Mx8/512K x16] CMOS單電壓3V時僅閃存
文件頁數(shù)： 9/63頁
文件大?。?/td> 765K
代理商： 29LV800BT-90
9
P/N:PM1062
MX29LV800BT/BB
REV. 1.3, DEC. 20, 2004
TABLE 4-3. CFI Mode: Device Geometry Data Values
(All values in these tables are in hexadecimal)
Description
Address
(Byte Mode)
4E
50
52
54
56
58
5A
5C
5E
60
62
64
66
68
6A
6C
6E
70
72
74
76
78
Address
(Word Mode)
27
28
29
2A
2B
2C
2D
2E
2F
30
31
32
33
34
35
36
37
38
39
3A
3B
3C
Data
Device size (2
N
bytes)
Flash device interface code (refer to the CFI publication 100)
0014
0002
0000
0000
0000
0004
0000
0000
0040
0000
0001
0000
0020
0000
0000
0000
0080
0000
000E
0000
0000
0001
Maximum number of bytes in multi-byte write (not supported)
Number of erase block regions
Erase block region 1 information (refer to the CFI publication 100)
Erase block region 2 information
Erase block region 3 information
Erase block region 4 information
TABLE 4-4. CFI Mode: Primary Vendor-Specific Extended Query Data Values
(All values in these tables are in hexadecimal)
Description
Address
(Byte Mode)
80
82
84
86
88
8A
8C
8E
90
92
94
96
98
Address
(Word Mode)
40
41
42
43
44
45
46
47
48
49
4A
4B
4C
Data
Query-unique ASCII string "PRI"
0050
0052
0049
0031
0030
0000
0002
0001
0001
0004
0000
0000
0000
Major version number, ASCII
Minor version number, ASCII
Address sensitive unlock (0=required, 1= not required)
Erase suspend (2= to read and write)
Sector protect (N= # of sectors/group)
Temporary sector unprotected (1=supported)
Sector protect/unprotected scheme
Simultaneous R/W operation (0=not supported)
Burst mode type (0=not supported)
Page mode type (0=not supported)
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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