參數(shù)資料
型號(hào)： 2MBI100U4A-120
廠商： FUJI ELECTRIC CO LTD
元件分類： IGBT 晶體管
英文描述： IGBT MODULE
中文描述： 150 A, 1200 V, N-CHANNEL IGBT
封裝： MODULE-7
文件頁(yè)數(shù)： 7/13頁(yè)
文件大?。?/td> 431K
代理商： 2MBI100U4A-120
H04-004-03a
MS5F6061
13
7
Reliability Test Items
Test
cate-
gories
Test items
Test methods and conditions
Reference
norms
EIAJ ED-4701
(Aug.-2001 edition)
Test Method 101
Number
of
sample
Accept-
ance
number
1 High temperature
Reverse Bias
5
( 0 : 1 )
Test temp.
: Ta = 125
±
5
℃
(Tj
≦
150
℃
)
: VC = 0.8×VCES
: Applied DC voltage to C-E
VGE = 0V
: 1000hr.
Bias Voltage
Bias Method
Test duration
2 High temperature
Bias (for gate)
Test Method 101
5
( 0 : 1 )
Test temp.
: Ta = 125
±
5
℃
(Tj
≦
150
℃
)
: VC = VGE = +20V or -20V
: Applied DC voltage to G-E
VCE = 0V
: 1000hr.
Bias Voltage
Bias Method
Test duration
3 Temperature
Humidity Bias
Test Method 102
Condition code C
5
( 0 : 1 )
Test temp.
Relative humidity
Bias Voltage
Bias Method
: 85
±
2
o
C
: 85
±
5%
: VC = 0.8×VCES
: Applied DC voltage to C-E
VGE = 0V
: 1000hr.
: 2 sec.
: 18 sec.
:
'
Tj=100±5 deg
Tj
≦
150
℃
, Ta=25±5
℃
: 15000 cycles
Test duration
ON time
OFF time
Test temp.
4 Intermitted
Operating Life
(Power cycle)
( for IGBT )
Test Method 106
5
( 0 : 1 )
Number of cycles
E
E
Failure Criteria
Item
Characteristic
Symbol
Failure criteria
Lower limit Upper limit
-
-
LSL×0.8
-
-
-
Unit
Note
Electrical
characteristic
Leakage current
ICES
±IGES
USL×2
USL×2
USL×1.2
USL×1.2
USL×1.2
USL×1.2
mA
P
A
mA
V
V
mV
Gate threshold voltage VGE(th)
Saturation voltage
Forward voltage
Thermal
IGBT
resistance
FWD
Isolation voltage
Visual inspection
Peeling
Plating
and the others
VCE(sat)
VF
'
VGE
or
'
VCE
'
VF
Viso
-
USL×1.2
mV
-
Broken insulation
Visual
inspection
-
The visual sample
-
LSL : Lower specified limit.
USL : Upper specified limit.
Note : Each parameter measurement read-outs shall be made after stabilizing the components
shall be made wipe or dry completely before the measurement.
at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests.
And in case of the wetting tests, for example, moisture resistance tests, each component
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參數(shù)描述
2MBI100U4A-120-50 制造商:Fuji Electric 功能描述:IGBT DUAL MODULE 100A 1200V 制造商:Fuji Electric 功能描述:IGBT, DUAL, MODULE, 100A, 1200V 制造商:Fuji Electric 功能描述:IGBT, DUAL, MODULE, 100A, 1200V; Transistor Polarity:N Channel; DC Collector Current:150A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:540W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Min:-40C ;RoHS Compliant: Yes
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