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參數(shù)資料
| 型號： | 2MBI200U4D-120 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT MODULE |
| 中文描述： | 300 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-7 |
| 文件頁數(shù)： | 4/13頁 |
| 文件大小： | 437K |
| 代理商： | 2MBI200U4D-120 |
H04-004-03a
MS5F6033
13
4
Storage temperature
Isolation
voltage
Screw
Torque
(*1) All terminals should be connected together when isolation test will be done.
-
IGES
Items
ICES
Turn-off time
Forward on voltage
Collector-Emitter
saturation voltage
VCE(sat)
(chip)
Cies
VCE(sat)
(terminal)
tr(i)
toff
3. Absolute Maximum Ratings ( at Tc= 25
o
C unless otherwise specified )
Maximum
Ratings
1200
VGES
Units
V
±20
300
VCES
Symbols
Conditions
600
400
Tc=80
o
C
Tc=25
o
C
Tc=80
o
C
Tstg
Ic=200A
VGE=15V
VCE=10V,VGE=0V,f=1MHz
Vcc=600V
Ic=200A
between terminal and copper base (*1)
-
-
-
-
-
0.03
0.41
0.07
1.80
-40 to +125
Tj=125
o
C
Tj=125
o
C
Tj=25
o
C
Tj=25
o
C
AC : 1min.
2500
-
-
nA
Viso
Zero gate voltage
collector current
Gate-Emitter
leakage current
Gate-Emitter
threshold voltage
Units
200
400
1040
+150
200
4. Electrical characteristics ( at Tj= 25
o
C unless otherwise specified )
Collector Power Dissipation
Junction temperature
1 device
Tj
W
Collector-Emitter voltage
Gate-Emitter voltage
mA
(*2) Recommendable Value : Mounting 2.5 to 3.5 Nm (M5 or M6)
(*3) Recommendable Value : Terminals 3.5 to 4.5 Nm (M6)
Pc
N m
o
C
V
V
-
-
-
2.05
2.25
1.90
2.10
22
0.32
0.10
2.20
-
2.05
-
-
1.20
0.60
-
1.00
0.30
1.95
-
Collector current
Ic
Continuous
1ms
Tc=25
o
C
Icp
1ms
A
-Ic
-Ic pulse
VAC
Conditions
Symbols
typ.
max.
Characteristics
min.
3.5
4.5
2.0
VGE=0V
VCE=0V
VGE=±20V
VCE=20V
VCE=1200V
-
-
400
V
Ic=200mA
VGE(th)
4.5
6.5
8.5
nF
ton
tr
us
VGE=±15V
RG=3.0
Ω
tf
VF
(terminal)
VF
(chip)
trr
-
-
-
-
-
-
IF=200A
VGE=0V
Tj=25
o
C
Tj=125
o
C
Tj=25
o
C
-
0.35
V
1.90
1.65
1.75
-
1.80
Items
0.52
-
m
Ω
us
R lead
Mounting (*2)
Terminals (*3)
(*4) Biggest internal terminal resistance among arm.
Input capacitance
Turn-on time
IF=200A
-
Tj=125
o
C
-
Reverse recovery time
Lead resistance,
terminal-chip (*4)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2MBI200U4H-120 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE |
| 2MBI200U4H-120-50 | 制造商:Fuji Electric 功能描述:IGBT 2 PACK MOD 1200V 200A M234 制造商:Fuji Electric 功能描述:IGBT, 2 PACK MOD, 1200V, 200A, M234 制造商:Fuji Electric 功能描述:IGBT, 2 PACK MOD, 1200V, 200A, M234; Transistor Type:IGBT Module; DC Collector Current:200A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:1.04kW; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:7 ;RoHS Compliant: Yes |
| 2MBI200U4H-170 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE |
| 2MBI200UB-120 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:DUAL IGBT |
| 2MBI200UC-120 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IGBT Module U-Series |
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