參數(shù)資料
型號(hào): 2MBI300U4E-120
廠商: FUJI ELECTRIC CO LTD
元件分類(lèi): IGBT 晶體管
英文描述: IGBT MODULE
中文描述: 450 A, 1200 V, N-CHANNEL IGBT
封裝: MODULE-7
文件頁(yè)數(shù): 10/13頁(yè)
文件大小: 440K
代理商: 2MBI300U4E-120
H04-004-03a
MS5F6058
13
a
10
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=300A, VGE=±15V, Tj=125
o
C
Reverse bias safe operating area (max.)
+VGE=15V, -VGE <= 15V, RG >= 2.0
Ω
,
Tj <= 125
o
C
Tj=25
o
C
Vcc=600V, VGE=±15V, RG=2.0
Ω
Switching loss vs. Collector current (typ.)
Vcc=600V, Ic=300A, VGE=±15V,
Switching time vs. Gate resistance (typ.)
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=2.0
Ω
, Tj=25
o
C
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=2.0
Ω
, Tj=125
o
C
10
100
1000
10000
0
100
200
300
400
500
600
Collector current : Ic [ A ]
ton
tr
toff
tf
S
10
100
1000
10000
0
100
200
Collector current : Ic [ A ]
300
400
500
600
tf
tr
toff
ton
S
10
100
1000
10000
0.1
1.0
10.0
100.0
Gate resistance : RG [
Ω
]
toff
ton
S
tr
tf
0
10
20
30
40
50
0
100
200
Collector current : Ic [ A ]
300
400
500
600
Eoff(125
o
C)
S
Eon(125
C)
Err(125
o
C)
Eoff(25
o
C)
Eon(25
o
C)
Err(25
o
C)
0
10
20
30
40
50
60
0
1
10
100
Gate resistance : RG [
Ω
]
S
Eon
Eoff
Err
0
200
400
600
800
0
400
Collector-Emitter voltage : VCE [ V ]
800
1200
1600
C
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