- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371448 > 2N111 (Fairchild Semiconductor Corporation) Integrated N-Channel PowerTrench MOSFET and Schottky Diode PDF資料下載
參數(shù)資料
| 型號： | 2N111 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Integrated N-Channel PowerTrench MOSFET and Schottky Diode |
| 中文描述： | 集成的N溝道PowerTrench MOSFET和肖特基二極管 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 289K |
| 代理商： | 2N111 |
August 2005
F
2005 Fairchild Semiconductor Corporation
FDFM2N111 Rev. C
2
(W)
1
FDFM2N111
Integrated N-Channel PowerTrench
MOSFET and Schottky Diode
General Description
FDFM2
N
111 combines the exceptional performance of
Fairchild's PowerTrench MOSFET technology with a very
low forward voltage drop Schottky barrier rectifier in a
MicroFET package.
This device is designed specifically as a single package
solution for Standard Buck Converter. It features a fast
switching, low gate charge MOSFET with very low on-state
resistance.
Applications
Standard Buck Converter
Features
4 A, 20 V R
DS(ON)
= 100m
@ V
GS
= 4.5 V
R
DS(ON)
= 150m
@ V
GS
= 2.5 V
Low Profile - 0.8 mm maximun - in the new package
MicroFET 3x3 mm
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GSS
Parameter
Ratings
20
±
12
4
10
20
2
1.7
0.8
-55 to +150
Units
V
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous (Note 1a)
-Pulsed
Schottky Repetitive Peak Reverse voltage
Schottky Average Forward Current (Note 1a)
Power dissipation (Steady State) (Note 1a)
Power dissipation (Steady State) (Note 1b)
Operating and Storage Junction Temperature Range
I
D
A
V
RRM
I
O
V
A
P
D
W
T
J
, T
STG
o
C
R
θ
JA
R
θ
JA
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Ambient (Note 1b)
70
150
o
C/W
o
C/W
Device Marking
2N111
Device
FDFM2N111
Reel Size
7inch
Tape Width
12mm
Quantity
3000 units
5
1
6
2
3
4
MLP 3x3
TOP
BOTTOM
A
A
S/C
S/C
G
D
PIN 1
A
S/C
D
A
S/C
G
C
D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N1131 | LOW POWER PNP SILICON TRANSISTOR |
| 2N1131L | LOW POWER PNP SILICON TRANSISTOR |
| 2N1132 | LOW POWER PNP SILICON TRANSISTOR |
| 2N1132L | LOW POWER PNP SILICON TRANSISTOR |
| 2N1188 | 5-Pin, Multiple-Input, Programmable Reset ICs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N1114 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 200MA I(C) | TO-5 |
| 2N1115 | 制造商:General Electric Company 功能描述: |
| 2N1116 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Small Signal Transistors |
| 2N1117 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Small Signal Transistors |
| 2N1118 | 制造商: 功能描述: 制造商:undefined 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。