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參數(shù)資料
| 型號： | 2N111 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Integrated N-Channel PowerTrench MOSFET and Schottky Diode |
| 中文描述： | 集成的N溝道PowerTrench MOSFET和肖特基二極管 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 289K |
| 代理商： | 2N111 |
F
FDFM2N111 Rev. C
2
(W)
3
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins. R
θ
CA
is guaranteed by design while R
θ
CA
is determined by the
user's board design.
a) 70
o
C/W when mounted on
a 1in
2
pad of 2 oz copper
b) 150
o
C/W whe mounted on
a minimum pad of 2 oz
copper
Scale 1: 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
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