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參數(shù)資料
| 型號： | 2N2324AS |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | Silicon Controlled Rectifier |
| 英文描述： | 0.3454 A, 100 V, SCR, TO-5 |
| 封裝： | TO-5, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 57K |
| 代理商： | 2N2324AS |
2N2323, A, AS, S; 2N2324, A, AS, S; 2N2326, A, AS, S; 2N2328, A, AS, S; 2N232, S JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
Forward Blocking Current
R2 = 1 k
2N2323 thru 2N2329
2N2323S thru 2N2329S
R2 = 2 k
2N2323A thru 2N2328A
2N2323AS thru 2N2328AS
VR = 50 Vdc
2N2323, S, A, AS
VR = 100 Vdc
2N2324, S, A, AS
VR = 200 Vdc
2N2326, S, A, AS
VR = 300 Vdc
2N2328, S, A, AS
VR = 400 Vdc
2N2329, S
IFBX1
10
Adc
Reverse Gate Current
VKG = 6 Vdc
IKG
200
Adc
Gate Trigger Voltage and Current
V2 = VFBX = 6 Vdc; RL = 100
Re = 1 k
2N2323 thru 2N2329 and
2N2323S thru 2N2329S
Re = 2 k
2N2323A thru 2N2328A and
2N2323AS thru 2N2328AS
VGT1
IGT1
VGT1
IGT1
0.35
0.80
200
0.60
20
Vdc
Adc
Vdc
Adc
SUBGROUP 4 TESTING
Exponential Rate of Voltage Rise TA = 125
0C
50
≤ R
L
≤ 400 , C = 0.1 to 1.0 F, repetition rate = 60 pps,
test duration = 15 seconds
dv/dt = 1.8 v/
s, R
3 = 1 k
2N2323 thru 2N2329 and
2N2323S thru 2N2329S
dv/dt = 0.7 v/
s, R
3 = 2 k
2N2323A thru 2N2328A and
2N2323AS thru 2N2328AS
VAA = 50 Vdc
2N2323, S, A, AS
VAA = 100 Vdc
2N2324, S, A, AS
VAA = 200 Vdc
2N2326, S, A, AS
VAA = 300 Vdc
2N2328, S, A, AS
VAA = 400 Vdc
2N2329, S
VFBX
47
95
190
285
380
Vdc
Forward “on” Voltage
iFM = 4a (pk) (pulse), pulse width = 8.5 ms, max; duty cycle = 2% max
VFM
2.2
V(pk)
Holding Current
VAA = 24 Vdc max, IF1 = 100 mAdc, IF2 = 10 mAdc
Gate trigger source voltage = 6 Vdc,
trigger pulse width = 25
s min., R
2 = 330
R3 = 1 k
2N2323 thru 2N2329 and
2N2323S thru 2N2329S
R3 = 2 k
2N2323A thru 2N2328A and
2N2323AS thru 2N2328AS
IHOX
2.0
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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| 2N2324ASJAN | 制造商:Microsemi Corporation 功能描述:Thyristor SCR 100V 15A 3-Pin TO-5 |
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