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參數(shù)資料
| 型號(hào)： | 2N3485A |
| 廠商： | Semicoa Semiconductor |
| 英文描述： | Type 2N3485A Geometry 0600 Polarity PNP |
| 中文描述： | 類型2N3485A幾何0600極性進(jìn)步黨 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 45K |
| 代理商： | 2N3485A |
Data S heet No. 2N3485A
OFF Characteristics
Collector-Base Breakdown Voltage
I
C
= 10 μA
Collector-Emitter Breakdown Voltage
I
C
= 10 mA
Emitter-Base Breakdown Voltage
I
E
= 10 μA, pulsed
Collector-Base Cutoff Current
V
CB
= 50 V
Emitter-Base Cutoff Current
V
EB
= 3.5 V
Symbol
Min
Typ
Max
Unit
nA
nA
V
Electrical Characteristics
T
C
= 25
o
C unless otherwise specified
V
V
V
(BR)CBO
60
---
100
V
(BR)CEO
60
---
70
V
(BR)EBO
5.0
---
9.0
I
EBO
---
50
0.1
I
CBO
---
10
0.25
ON Characteristics
Forward Current Transfer Ratio
I
C
= 100 μA, V
CE
= 10 V
I
C
= 1.0 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 150 mA, V
CE
= 10 V (pulse test)
I
C
= 500 mA, V
CE
= 10 V (pulse test)
Collector-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA (pulse test)
I
C
= 500 mA, I
B
= 50 mA (pulse test)
Base-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA (pulse test)
I
C
= 500 mA, I
B
= 50 mA (pulse test)
Symbol
Min
Typ
Max
Unit
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
40
40
40
40
40
225
250
---
---
80
---
---
---
120
---
---
---
---
---
---
V
CE(sat)1
V
CE(sat)2
---
---
0.18
0.5
0.4
1.6
V dc
V dc
V
BE(sat)1
V
BE(sat)2
---
---
0.87
1.0
1.3
2.6
V dc
V dc
Small Signal Characteristics
Short Circuit Forward Current Transfer Ratio
I
C
= 1 mA, V
CE
= 10 V, f = 1 kHz
Open Circuit Output Capacitance
V
CB
= 10 V, I
E
= 0 V, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
V
EB
= 2.0 V, I
C
= 0, 100 kHz < f < 1 MHz
Symbol
Min
Typ
Max
Unit
pF
C
OBO
---
6.0
8.0
pF
h
FE
40
250
---
C
IBO
---
8.0
30
---
Switching Characteristics
Saturated Turn On Switching Time to 90%
16V, 50 ohm input pulse
Saturated Turn Off Switching Time to 10%
16V, 50 ohm input pulse
Symbol
Min
Typ
Max
Unit
ns
t
OFF
---
175
175
ns
t
ON
---
25
45
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