參數資料
型號: 2N3762
元件分類: 小信號晶體管
英文描述: 1.5 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
封裝: TO-39, 3 PIN
文件頁數: 2/2頁
文件大?。?/td> 35K
代理商: 2N3762
6 Lake Street, Lawrence, MA 01841
03/98 REV: D
1-800-446-1158 / (978)-794-1666 / (978) Fax: (978) 689-0803
Page 2 of 2
2N3762, L, 2N3763, L, 2N3764, 2N3765 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
Collector-Base Cutoff Current
VCB = 20 Vdc
2N3762, L, 2N3764
VCB = 30 Vdc
2N3763, L, 2N3765
ICBO
100
ηAdc
Collector-Emitter Cutoff Current
VEB = 2.0 Vdc, VCE = 20 Vdc
2N3762, L, 2N3764
VEB = 2.0 Vdc, VCE = 30 Vdc
2N3763, L, 2N3765
ICEX
100
ηAdc
Emitter-Base Cutoff Current
VEB = 2.0 Vdc
IEBO
200
ηAdc
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 10 mAdc, VCE = 1.0 Vdc
IC = 150 mAdc, VCE = 1.0 Vdc
IC = 500 mAdc, VCE = 1.0 Vdc
IC = 1.0 Adc, VCE = 1.5 Vdc
2N3762, L, 2N3764
2N3763, L, 2N3765
IC = 1.5 Adc, VCE = 5.0 Vdc
2N3762, L, 2N3764
2N3763, L, 2N3765
hFE
35
40
30
20
30
20
140
120
80
Collector-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 150 m Adc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
IC = 1.0 Adc, IB = 100 mAdc
VCE(sat)
0.1
0.22
0.5
0.9
Vdc
Base-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 150 m Adc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
IC = 1.0 Adc, IB = 100 mAdc
VBE(sat)
0.9
0.8
1.0
1.2
1.4
Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio, Magnitude
IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz
2N3762, L, 2N3764
2N3763, L, 2N3765
h
fe
1.8
1.5
6.0
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cobo
25
pF
Input Capacitance
VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cibo
80
pF
SWITCHING CHARACTERISTICS
Delay Time
VCC = 30 Vdc, VEB = 0,
td
8.0
ηs
Rise Time
IC = 1.0 mAdc, IB1 = 100 mAdc
tr
35
ηs
Storage Time
VCC = 30 Vdc, VEB = 0,
ts
80
ηs
Fall Time
IC = 1.0 mAdc, IB1 = 100 mAdc
tf
35
ηs
(3) Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%.
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相關代理商/技術參數
參數描述
2N3762L 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 40V 1.5A 3PIN TO-5 - Bulk
2N3763 功能描述:兩極晶體管 - BJT Small Signal RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N3763L 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 1.5A 3PIN TO-5 - Bulk
2N3764 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 40V 1.5A 3-Pin TO-46 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 40V 1.5A 3PIN TO-46 - Bulk 制造商:Microsemi 功能描述:Trans GP BJT PNP 40V 1.5A 3-Pin TO-46
2N3765 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 1.5A 3PIN TO-46 - Bulk