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參數(shù)資料
| 型號(hào)： | 2N3957 |
| 廠商： | InterFET Corporation |
| 英文描述： | N-Channel Dual Silicon Junction Field-Effect Transistor |
| 中文描述： | N溝道雙硅結(jié)場(chǎng)效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 66K |
| 代理商： | 2N3957 |
B-6
01/99
2N3957, 2N3958
N-Channel Dual Silicon Junction Field-Effect Transistor
￥ Low and Medium Frequency
Differential Amplifiers
￥ High Input Impedance
Amplifiers
Absolute maximum ratings at T
A
= 25C
Reverse Gate Source & Reverse Gate Drain Voltage
Gate Current
Total Device Power Dissipation (each side)
@ 85°C Case Temperature (both sides)
Power Derating (both sides)
– 50 V
50 mA
250 mW
500 mW
4.3 mW/°C
TOD71 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate, 5 Source,
6 Drain, 7 Gate
At 25°C free air temperature:2N3957
2N3958
Process NJ16
Static Electrical Characteristics
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V
(BR)GSS
– 50
– 50
V
pA
nA
pA
nA
V
V
V
V
mA
I
G
= – 1 μA, V
DS
= V
V
GS
= – 30V, V
DS
= V
V
GS
= – 30V, V
DS
= V
V
DS
= 20V, I
D
= 200 μA
V
DS
= 20V, I
D
= 200 μA
V
DS
= 20V, I
D
= 50 μA
V
DS
= 20V, I
D
= 200 μA
V
DS
= 20V, I
D
= 1 nA
V
DS
= , I
G
= 1 mA
V
DS
= 20V, V
GS
= V
Gate Reverse Current
I
GSS
– 100
– 500
– 50
– 250
– 4.2
– 4
– 4.5
2
5
– 100
– 500
– 50
– 250
– 4.2
– 4
– 4.5
2
5
T
A
= 125°C
Gate Operating Current
I
G
T
A
= 125°C
Gate Source Voltage
V
GS
– 0.5
– 1
– 0.5
– 1
Gate Source Cutoff Voltage
Gate Source Forward Voltage
Drain Saturation Current (Pulsed)
V
GS(OFF)
V
GS(F)
I
DSS
0.5
0.5
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
g
fs
1000 3000 1000 3000
1000
35
4
1.5
μS
μS
μS
pF
pF
V
DS
= 20V, V
GS
= V
V
DS
= 20V, V
GS
= V
V
DS
= 20V, V
GS
= V
V
DS
= 20V, V
GS
= V
V
DS
= 10V, I
S
= A
f = 1 kHz
f = 200 MHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
1000
Common Source Output Conductance
Common Source Input Capacitance
Drain Gate Capacitance
Common Source
Reverse Transfer Capacitance
g
os
C
iss
C
dgo
35
4
1.5
C
rss
1.2
1.2
pF
V
DS
= 20V, V
GS
= V
f = 1 MHz
Noise Figure
NF
0.5
0.5
dB
V
DS
= 20V, V
GS
= V
R
G
= 10M
V
DS
= 20V, I
D
= 200 μA
V
DS
= 20V, V
GS
= V
V
DS
= 20V, I
D
= 200 μA
f = 100 Hz
Differential Gate Current
Saturation Drain Current Ratio
Differential Gate Source Voltage
|I
G1
– I
G2
|
I
DSS1
/ I
DSS2
10
1
20
10
1
25
nA
T
A
= 125°C
0.9
0.85
|V
GS1
– V
GS2
|
mV
T
A
= 25°C
to – 55°C
Differential Gate Source
Voltage with Temperature
V
GS1
– V
GS2
T
6
8
mV
V
DS
= 20V, I
D
= 200 μA
T
A
= 25°C
to 125°C
7.5
10
mV
V
DS
= 20V, I
D
= 200 μA
Transconductance Ratio
g
fs1
/ g
fs2
0.9
1
0.85
1
V
DS
= 20V, I
D
= 200 μA
f = 1 kHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
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| 2N3958 | 功能描述:JFET Dual 50V 0.05 RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2N3958_PDIP | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:a Low Noise, Low Drift, Monolithic Dual N-Channel JFET |
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