參數(shù)資料
型號(hào)： 2N3994
廠商： InterFET Corporation
英文描述： P-Channel Silicon Junction Field-Effect Transistor
中文描述： P溝道硅結(jié)場效應(yīng)晶體管
文件頁數(shù)： 1/1頁
文件大?。?/td> 92K
代理商： 2N3994
B-8
01/99
2N3994, 2N3994A
P-Channel Silicon Junction Field-Effect Transistor
￥ Choppers
￥ High Speed Commutators
Absolute maximum ratings at T
A
= 25C
Reverse Gate Source Voltage
Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
25 V
25 V
– 10 mA
300 mW
2.4 mW/°C
TOD72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Gate, 3 Drain, 4 Case
At 25°C free air temperature:
2N3994
2N3994A
Process PJ99
Static Electrical Characteristics
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
V
(BR)GSS
V
GS(OFF)
I
DSS
25
1
– 2
25
1
– 2
V
V
I
G
= 1 μA, V
DS
= V
V
DS
= – 10V, I
D
= – 1 μA
V
DS
= – 10V, V
GS
= V
V
DG
= – 15V, I
S
= A
V
DG
= – 15V, I
S
= A
V
DS
= – 10V, V
GS
= 10V
V
DS
= – 10V, V
GS
= 10V
5.5
5.5
mA
nA
μA
nA
μA
Drain Reverse Current
I
DGO
– 1.2
– 1.2
– 1.2
– 1
– 1.2
– 1.2
– 1.2
– 1
T
A
= 150°C
Drain Cutoff Current
I
D(OFF)
T
A
= 150°C
Dynamic Electrical Characteristics
Drain Source ON Resistance
r
ds(on)
300
300
V
GS
= V, I
D
= A
f = 1 kHz
Common Source
Forward Transmittance
|Y
fs
|
4
10
5
10
mS
V
DS
= – 10V, V
GS
= V
f = 1 kHz
Common Source Input Capacitance
C
iss
16
12
pF
V
DS
= – 10V, V
GS
= V
f = 1 MHz
Common Source
Reverse Transfer Capacitance
C
rss
5
3.5
pF
V
DS
= , V
GS
= 10V
f = 1 MHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
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