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參數(shù)資料
| 型號： | 2N3998J |
| 廠商： | SEMICOA CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED, METAL CAN PACKAGE-3 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 169K |
| 代理商： | 2N3998J |
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. D
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N3998
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Collector-Base Breakdown Voltage
V(BR)CBO
IC = 10 A
100
Volts
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 50 mA
80
Volts
Collector-Emitter Cutoff Current
ICEO
VCE = 60 Volts
10
A
Collector-Emitter Cutoff Current
ICES1
VCE = 80 Volts
VCE = 80 Volts, TA = 150°C
200
50
nA
A
Emitter-Base Cutoff Current
IEBO1
IEBO2
VEB = 5 Volts
VEB = 8 Volts
200
10
nA
A
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
IC = 50 mA, VCE = 2 Volts
IC = 1 A, VCE = 2 Volts
IC = 5 A, VCE = 5 Volts
IC = 1 A, VCE = 2 Volts
TA = -55°C
30
40
15
10
120
Base-Emitter Saturation Voltage
VBEsat1
VBEsat2
IC = 1 A, IB = 100 mA
IC = 5 A, IB = 500 mA
0.6
1.2
1.6
Volts
Collector-Emitter Saturation Voltage
VCEsat1
VCEsat2
IC = 1 A, IB = 100 mA
IC = 5 A, IB = 500 mA
0.25
2
Volts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE|
VCE = 5 Volts, IC = 1 A,
f = 10 MHz
3
12
Open Circuit Output Capacitance
COBO
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
150
pF
Switching Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Delay Time
td
100
ns
Rise Time
tr
240
ns
Storage Time
ts
1.4
s
Fall Time
tf
300
ns
Saturated Turn-On Time
tON
300
ns
Saturated Turn-Off Time
tOFF
1.5
s
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