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參數(shù)資料
| 型號： | 2N4352 |
| 廠商： | CALOGIC LLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel Enhancement Mode MOSFET Amplifier/Switch |
| 中文描述： | 30 mA, 25 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72 |
| 封裝： | HERMETIC SEALED PACKAGE-4 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 118K |
| 代理商： | 2N4352 |
P-Channel Enhancement Mode
MOSFET Amplifier/Switch
2N4352
FEATURES
Low ON Resistance
Low Capacitance
High Gain
P-Channel Complement to 2N4341
ABSOLUTE MAXIMUM RATINGS
(TA = 25
oC unless otherwise noted)
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±30V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Storage Temperature Range . . . . . . . . . . . . . -65
oC to +200oC
Operating Temperature Range . . . . . . . . . . . -55
oC to +150oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . 1.7mW/oC
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
Package
Temperature Range
2N4352
Hermetic TO-72
-55
oC to +150oC
X2N4352
Sorted Chips in Carriers
-55
oC to +150oC
LLC
PIN CONFIGURATION
TO-72
G
D
C
S
1503
ELECTRICAL CHARACTERISTICS (TA = 25
oC unless otherwise specified)
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
V(BR)DSX
Drain-Source Breakdown Voltage
-25
Vdc
ID = -10
A, VGS = 0
IDSS
Zero-Gate-Voltage Drain Current
-10
nAdc
Adc
VDS = -10V, VGS = 0, TA = 25
oC
VDS = -10V, VGS = 0, TA = 150
oC
IGSS
Gate Reverse Current
±10
pA
VGS =
±30V, VDS = 0
VGS(th)
Gate Threshold Voltage
-1.0
-5.0
Vdc
VDS = -10V, ID = -10
A
VDS(on)
Drain-Source On-Voltage
-1.0
V
ID = -2mA, VGS = -10V
ID(on)
On-State Drain Current
-3.0
mA
VGS = -10V, VDS = -10V
rDS(on)
Drain-Source Resistance
600
ohms
VGS = -10V, ID = 0, f = 1.0kHz
| yfs |
Forward Transfer Admittance
1000
mho
VDS = -10V, ID = 2.0mA, f = 1.0kHz
Ciss
Input Capacitance
5.0
pF
VDS = -10V, VGS = 0, f = 140MHz
Crss
Reverse Transfer Capacitance
1.3
VDS = 0, VGS = 0, f = 140MHz
Cd(sub)
Drain-Substrate Capacitance
5.0
VD(sub) = -10V, f = 140kHz
td1
Turn-On Delay
45
ns
ID = -2.0mAdc, VDS = -10Vdc
VGS = -10V
tr
Rise Time
65
td2
Turn-Off Delay
60
tf
Fall Time
100
CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX
DS005 REV A
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2N4352_TO-72 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:an enhancement mode N-Channel Mosfet |
| 2N4354 | 制造商:n/a 功能描述:2N4354 S7E5A |
| 2N4354NSC | 制造商:National Semiconductor 功能描述:2N4354 |
| 2N4355 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 500MA I(C) | TO-222AB |
| 2N4356 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 500MA I(C) | TO-222AB |
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