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| 型號： | 2N4393 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel JFET(最大導(dǎo)通電阻100Ω，夾斷電流5pA的N溝道結(jié)型場效應(yīng)管) |
| 中文描述： | N溝道場效應(yīng)（最大導(dǎo)通電阻100Ω，夾斷電流5pA的N溝道結(jié)型場效應(yīng)管） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 83K |
| 代理商： | 2N4393 |
2N/PN/SST4391 Series
2
Siliconix
E-77090—Rev. E, 11-Aug-97
Absolute Maximum Ratings
Gate-Drain, Gate-Source Voltage:
(2N/PN Prefixes)
(SST Prefix)
–40 V
–35 V
. . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . .
Gate Current
50 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature
300 C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature :
(2N Prefix)
(PN/SST Prefixes)
–65 to 200 C
–55 to 150 C
. . . . . . . . . . . . . .
. . . . . . . .
Operating Junction Temperature :
(2N Prefix)
(PN/SST Prefixes)
(2N Prefix)
a
(PN/SST Prefixes)
b
–55 to 200 C
–55 to 150 C
. . . . . . . . . . . . . .
. . . . . . . .
. . . . . .
Power Dissipation :
(T
C
= 25 C) 1800 mW
. . . . . . . . . . .
350 mW
Notes
a.
b.
Derate 10 mW/ C above 25 C
Derate 2.8 mW/ C above 25 C
Specifications
a
Limits
4391
4392
4393
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
= –1 A, V
DS
= 0 V
–55
–40
–40
–40
V
Gate-Source
Cutoff Voltage
GS( ff)
V
GS(off)
V
DS
= 20 V
V
DS
= 15 V
2N/PN: I
D
= 1 nA
SST: I
D
= 10 nA
0 5
–0.5
–4
–10
–2
–5
–3
S t
Saturati
c
Current
D i
2N
50
150
25
75
5
30
I
DSS
V
DS
= 20 V, V
GS
= 0 V
PN
50
150
25
100
5
60
mA
SST
50
25
5
V
= –20 V
GS
V
DS
= 0 V
2N/SST
–5
–100
–100
–100
pA
PN
–5
–1000
–1000
–1000
Gate Reverse Current
I
GSS
2N: T
A
= 150 C
PN: T
A
= 100 C
SST: T
A
= 125 C
–13
–200
–200
–200
–1
–200
–200
–200
nA
–3
Gate Operating Current
I
G
V
DG
= 15 V, I
D
= 10 mA
2N: V
GS
= –5 V
2N: V
GS
= –7 V
2N: V
GS
= –12 V
= 20 V
PN: V
GS
= –5 V
PN: V
GS
= –7 V
PN: V
GS
= –12 V
SST V
DS
= 10 V, V
GS
= –10 V
2N: V
GS
= –5 V
DS
= 20 V
= 150 C
T
A
150 C
2N: V
GS
= –12 V
PN: V
GS
= –5 V
DS
= 20 V
= 100 C
T
A
100 C
PN: V
GS
= –12 V
V
DS
= 10 V
T
A
= 125 C
–5
5
100
pA
5
100
V
DS
5
100
0.005
0.005
nA
0.005
5
100
100
100
pA
Drain Cutoff Current
I
D(off)
V
13
200
2N: V
GS
= –7 V
13
200
13
200
V
1
200
nA
PN: V
GS
= –7 V
1
200
1
200
SST: V
GS
= –10 V
3
D i S
Drain-Source
On-Voltage
On Voltage
I
D
= 3 mA
I
D
= 6 mA
I
D
= 12 mA
0.25
0.4
V
DS(on)
V
GS
= 0 V
0.3
0.4
V
0.35
0.4
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