參數(shù)資料
型號(hào)： 2N4402RL1
廠商： ON SEMICONDUCTOR
元件分類： 小信號(hào)晶體管
英文描述： 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝： PLASTIC, TO-226AA, 3 PIN
文件頁數(shù)： 20/25頁
文件大?。?/td> 427K
代理商： 2N4402RL1
2N4402 2N4403
2–35
Motorola Small–Signal Transistors, FETs and Diodes Device Data
6
8
10
0
4
2
0.1
2.0 5.0
10
20
50
1.0
0.5
0.2
0.01 0.02
0.05
100
Figure 8. Frequency Effects
f, FREQUENCY (kHz)
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = –10 Vdc, TA = 25°C
Bandwidth = 1.0 Hz
NF
,NOISE
FIGURE
(dB)
IC = 1.0 mA, RS = 430
IC = 500 A, RS = 560
IC = 50 A, RS = 2.7 k
IC = 100 A, RS = 1.6 k
RS = OPTIMUM SOURCE RESISTANCE
50
100
200
500
1 k
2 k
5 k
10 k
20 k
50 k
6
8
10
0
4
2
NF
,NOISE
FIGURE
(dB)
Figure 9. Source Resistance Effects
RS, SOURCE RESISTANCE (OHMS)
f = 1 kHz
IC = 50 A
100
A
500
A
1.0 mA
h PARAMETERS
VCE = –10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between
hfe and other “h” parameters for this series of transistors. To
obtain these curves, a high–gain and a low–gain unit were
selected from both the 2N4402 and 2N4403 lines, and the
same units were used to develop the correspondingly–
numbered curves on each graph.
Figure 10. Current Gain
IC, COLLECTOR CURRENT (mAdc)
0.1
0.2
0.5 0.7
1.0
2.0
3.0
10
0.3
300
700
30
200
100
1000
h
fe
,C
U
RRENT
G
AIN
h ie
,INPUT
IMPEDANCE
(OHMS)
Figure 11. Input Impedance
IC, COLLECTOR CURRENT (mAdc)
100 k
100
50
5.0 7.0
20 k
10 k
5k
2k
1k
0.1
0.2
0.5 0.7 1.0
2.0
3.0
10
0.3
5.0 7.0
Figure 12. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mAdc)
0.1
0.2
0.5 0.7 1.0
2.0
3.0
10
0.3
0.1
20
Figure 13. Output Admittance
IC, COLLECTOR CURRENT (mAdc)
500
1.0
5.0 7.0
50
20
10
5.0
2.0
5.0
2.0
1.0
0.5
0.2
h
,OUTPUT
ADMITT
ANCE
(
mhos)
oe
h
,V
OL
TA
G
E
F
EE
D
BAC
K
RA
TIO
(X
10
)
re
m
–4
2N4403 UNIT 1
2N4403 UNIT 2
2N4402 UNIT 1
2N4402 UNIT 2
0.1
0.2
0.5 0.7 1.0
2.0
3.0
10
0.3
5.0 7.0
500
70
50 k
500
200
2N4403 UNIT 1
2N4403 UNIT 2
2N4402 UNIT 1
2N4402 UNIT 2
2N4403 UNIT 1
2N4403 UNIT 2
2N4402 UNIT 1
2N4402 UNIT 2
10
2N4403 UNIT 1
2N4403 UNIT 2
2N4402 UNIT 1
2N4402 UNIT 2
100
相關(guān)PDF資料
PDF描述
2N4402RL 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4403RL1 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
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2N4402 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N4402RLRA 制造商:Rochester Electronics LLC 功能描述:- Bulk
2N4402TA 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N4402TA_Q 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N4402TAR 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N4402TF 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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