參數(shù)資料
型號： 2N5021
廠商： InterFET Corporation
英文描述： P-Channel Silicon Junction Field-Effect Transistor
中文描述： P溝道硅結(jié)場效應(yīng)晶體管
文件頁數(shù)： 1/1頁
文件大?。?/td> 89K
代理商： 2N5021
B-18
01/99
2N5020, 2N5021
P-Channel Silicon Junction Field-Effect Transistor
￥ Analog Switches
Absolute maximum ratings at T
A
= 25C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Storage Temperature Range
– 50 V
50 mA
500 mW
4 mW/°C
– 65°C to + 200°C
TOD18 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source 1, 2 Gate & Case, 3 Drain
Surface Mount
SMP5020, SMP5021
At 25°C free air temperature:
2N5020
2N5021
Process PJ32
Static Electrical Characteristics
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
V
(BR)GDO
I
GSS
V
GS(OFF)
I
DSS
25
25
V
nA
V
mA
I
G
= 1μA, V
DS
= V
V
GS
= 15V, V
DS
= V
V
DS
= – 15V, I
D
= 1 nA
V
DS
= – 15V, V
GS
= V
1
1
0.3
– 0.3 – 1.2
1.5
0.5
– 1
2.5
– 3.5
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
g
fs
1
3.5
1.5
6
mS
V
DS
= – 15V, V
GS
= V
Common Source Output Conductance
Common Source Input Capacitance
g
os
C
iss
20
25
20
25
μS
pF
V
DS
= – 15V, V
GS
= V
V
DS
= – 15V, V
GS
= V
f = 1 MHz
Common Source
Reverse Transfer Capacitance
C
rss
7
7
pF
V
DS
= – 15V, V
GS
= V
f = 1 MHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
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