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參數(shù)資料
| 型號： | 2N5062 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | Silicon Controlled Rectifier Reverse Blocking Thyristor(硅控整流器反向截止晶閘管) |
| 中文描述： | 0.8 A, 100 V, SCR, TO-92 |
| 封裝： | PLASTIC, CASE 29-11, TO-226AA, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 70K |
| 代理商： | 2N5062 |
2N5060 Series
http://onsemi.com
2
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive OffState Voltage (Note 1)
(T
J
=
40 to 110
°
C, Sine Wave,
50 to 60 Hz, Gate Open)
2N5060
2N5061
2N5062
2N5064
V
DRM,
V
RRM
30
60
100
200
V
On-State Current RMS (180
°
Conduction Angles; T
C
= 80
°
C)
I
T(RMS)
0.8
A
*Average On-State Current
(180
°
Conduction Angles)
(T
C
= 67
°
C)
(T
C
= 102
°
C)
I
T(AV)
0.51
0.255
A
*Peak Non-repetitive Surge Current,
T
A
= 25
°
C
(1/2 cycle, Sine Wave, 60 Hz)
I
TSM
10
A
Circuit Fusing Considerations (t = 8.3 ms)
I
2
t
0.4
A
2
s
*Average On-State Current
(180
°
Conduction Angles)
(T
C
= 67
°
C)
(T
C
= 102
°
C)
I
T(AV)
0.51
0.255
A
*Forward Peak Gate Power (Pulse Width
1.0 sec; T
A
= 25
°
C)
P
GM
0.1
W
*Forward Average Gate Power (T
A
= 25
°
C, t = 8.3 ms)
P
G(AV)
0.01
W
*Forward Peak Gate Current (Pulse Width
1.0 sec; T
A
= 25
°
C)
I
GM
1.0
A
*Reverse Peak Gate Voltage (Pulse Width
1.0 sec; T
A
= 25
°
C)
V
RGM
5.0
V
*Operating Junction Temperature Range
T
J
40 to +110
°
C
*Storage Temperature Range
T
stg
40 to +150
°
C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
*Thermal Resistance, JunctiontoCase (Note 2)
R
JC
75
°
C/W
Thermal Resistance, JunctiontoAmbient
R
JA
200
°
C/W
*Lead Solder Temperature (Lead Length
1/16
″
from case, 10 s Max)
+230*
°
C
2. This measurement is made with the case mounted “flat side down” on a heatsink and held in position by means of a metal clamp over the
curved surface.
*Indicates JEDEC Registered Data.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5062G | 功能描述:SCR 100V 800mA Thyristor RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| 2N5062RLRA | 功能描述:SCR 100V 800mA Thyristor RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| 2N5062RLRAG | 功能描述:SCR 100V 800mA Thyristor RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| 2N5063 | 功能描述:SCR 0.8A 150V RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| 2N5064 | 功能描述:SCR 0.8A 200V RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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