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參數(shù)資料
| 型號： | 2N5062 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | Silicon Controlled Rectifier Reverse Blocking Thyristor(硅控整流器反向截止晶閘管) |
| 中文描述： | 0.8 A, 100 V, SCR, TO-92 |
| 封裝： | PLASTIC, CASE 29-11, TO-226AA, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 70K |
| 代理商： | 2N5062 |
2N5060 Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
*Peak Repetitive Forward or Reverse Blocking Current (Note 3)
(V
AK
= Rated V
DRM
or V
RRM
)
T
C
= 25
°
C
T
C
= 110
°
C
I
DRM
, I
RRM
10
50
A
A
ON CHARACTERISTICS
*Peak Forward OnState Voltage (Note 4)
(I
TM
= 1.2 A peak @ T
A
= 25
°
C)
V
TM
1.7
V
Gate Trigger Current (Continuous DC) (Note 5)
*(V
AK
= 7.0 Vdc, R
L
= 100 )
T
C
= 25
°
C
T
C
= 40
°
C
I
GT
200
350
A
Gate Trigger Voltage (Continuous DC) (Note 5)
*(V
AK
= 7.0 Vdc, R
L
= 100 )
T
C
= 25
°
C
T
C
= 40
°
C
V
GT
0.8
1.2
V
*Gate NonTrigger Voltage
(V
AK
= Rated V
DRM
, R
L
= 100 ) T
C
= 110
°
C
V
GD
0.1
V
Holding Current (Note 5)
*(V
AK
= 7.0 Vdc, initiating current = 20 mA)
T
C
= 25
°
C
T
C
= 40
°
C
I
H
5.0
10
mA
Turn-On Time
Delay Time
Rise Time
(I
GT
= 1.0 mA, V
D
= Rated V
DRM
,
Forward Current = 1.0 A, di/dt = 6.0 A/ s
t
d
t
r
3.0
0.2
s
Turn-Off Time
(Forward Current = 1.0 A pulse,
Pulse Width = 50 s,
0.1% Duty Cycle, di/dt = 6.0 A/ s,
dv/dt = 20 V/ s, I
GT
= 1 mA)
2N5060, 2N5061
2N5062, 2N5064
t
q
10
30
s
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of OffState Voltage
(Rated V
DRM
, Exponential)
dv/dt
30
V/ s
3. R
GK
= 1000 is included in measurement.
4. Forward current applied for 1 ms maximum duration, duty cycle
5. R
GK
current is not included in measurement.
*Indicates JEDEC Registered Data.
1%.
+ Current
+ Voltage
V
TM
I
DRM
at V
DRM
I
H
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak on State Voltage
Holding Current
Voltage Current Characteristic of SCR
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode
Forward Blocking Region
(off state)
I
RRM
at V
RRM
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| 2N5062G | 功能描述:SCR 100V 800mA Thyristor RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| 2N5062RLRA | 功能描述:SCR 100V 800mA Thyristor RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| 2N5062RLRAG | 功能描述:SCR 100V 800mA Thyristor RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| 2N5063 | 功能描述:SCR 0.8A 150V RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| 2N5064 | 功能描述:SCR 0.8A 200V RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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