參數(shù)資料
型號(hào): 2N5114
廠商: VISHAY SILICONIX
元件分類(lèi): 小信號(hào)晶體管
英文描述: P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-206AA
封裝: TO-18, 3 PIN
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 33K
代理商: 2N5114
2N5114JAN/JANTX/JANTXV Series
Vishay Siliconix
www.vishay.com
9-2
Document Number: 70261
S-04030—Rev. E, 04-Jun-01
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N5114
2N5115
2N5116
Parameter
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V(BR)GSS
IG = 1 mA , VDS = 0 V
45
30
V
Gate-Source Cutoff Voltage
VGS(off)
VDS = –15 V, ID = –1 nA
5
10
3
6
1
4
V
VDS = –18 V
–30
–90
Saturation Drain Currentb
IDSS
VGS = 0 V
VDS = –15 V
–15
–60
–5
–25
mA
VGS = 20 V, VDS = 0 V
5
500
pA
Gate Reverse Current
IGSS
TA = 150_C
0.01
1
mA
Gate Operating Currentc
IG
VDG = –15 V, ID = –1 mA
–5
VGS = 12 V
–10
–500
VDS = –15 V
VGS = 7 V
–10
–500
pA
DS
VGS = 5 V
–10
–500
Drain Cutoff Current
ID(off)
VGS = 12 V
–0.02
–1
VDS = –15 V
T = 150
_C
VGS = 7 V
–0.02
–1
mA
TA = 150_C
VGS = 5 V
–0.02
–1
m
ID = –15 mA
–1.0
–1.3
Drain-Source On-Voltage
VDS(on)
VGS = 0 V
ID = –7 mA
–0.7
–0.8
V
DS(on)
GS
ID = –3 mA
–0.5
–0.6
Drain-Source On-Resistance
rDS(on)
VGS = 0 V, ID = –1 mA
75
100
150
W
Gate-Source Forward Voltage
VGS(F)
IG = –1 mA , VDS = 0 V
–0.7
–1
V
Dynamic
Drain-Source On-Resistance
rds(on)
VGS = 0 V, ID = 0 mA , f = 1 kHz
75
100
175
W
Common-Source
Input Capacitance
Ciss
VDS = –15 V, VGS = 0 V
f = 1 MHz
20
25
27
VGS = 12 V
5
7
pF
Common-Source
Reverse Transfer Capacitance
Crss
VDS = 0 V
f = 1 MHz
VGS = 7 V
6
7
pF
Reverse Transfer Capacitance
rss
f = 1 MHz
VGS = 5 V
6
7
Switching
td(on)
6
10
25
Turn-On Time
tr
10
20
35
td(off)
See Switching Circuit
6
8
20
ns
Turn-Off Time
tf
15
30
60
Notes
a.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
PSCIA
b.
Pulse test: PW
v300 ms duty cycle v3%.
c.
This parameter not registered with JEDEC.
相關(guān)PDF資料
PDF描述
2N5116 P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18
2N511B 25 A, 45 V, PNP, Ge, POWER TRANSISTOR
2N512B 25 A, 45 V, PNP, Ge, POWER TRANSISTOR
2N5139 Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-92
2N5147.MOD 2000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N5114_08 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:P-CHANNEL J-FET
2N5114_TO-18 制造商:MICROSS 制造商全稱:MICROSS 功能描述:P-CHANNEL JFET
2N5114-16 制造商:CALOGIC 制造商全稱:CALOGIC 功能描述:P-Channel JFET Switch
2N5114-E3 功能描述:JFET 30V 10pA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流(Vgs=0 時(shí)的 Idss):50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
2N5114JAN 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel JFETs